Invention Grant
- Patent Title: Stray field robust xMR sensor using perpendicular anisotropy
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Application No.: US16243450Application Date: 2019-01-09
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Publication No.: US10852369B2Publication Date: 2020-12-01
- Inventor: Wolfgang Raberg , Clemens Muehlenhoff , Juergen Zimmer
- Applicant: Infineon Technologies AG
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Agency: Design IP
- Main IPC: G01R33/09
- IPC: G01R33/09 ; H01L43/02 ; H01L43/10 ; H01F10/32 ; G01D5/16

Abstract:
A magnetoresistive sensor has a sensor plane in which the magnetoresistive sensor is sensitive to a magnetic field. The magnetoresistive sensor includes a reference layer having a reference magnetization that is fixed and that is aligned with an in-plane axis of the sensor plane; and a magnetic free layer disposed proximate to the reference layer, the magnetic free layer having a free layer magnetization aligned along an out-of-plane axis that is out-of-plane to the sensor plane. The free layer magnetization is configured to tilt away from the out-of-plane axis and towards the sensor plane in a presence of an external in-plane magnetic field.
Public/Granted literature
- US20200217907A1 STRAY FIELD ROBUST XMR SENSOR USING PERPENDICULAR ANISOTROPY Public/Granted day:2020-07-09
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