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公开(公告)号：US11467232B2
公开(公告)日：2022-10-11
申请号：US16948478
申请日：2020-09-21
Applicant: Infineon Technologies AG
Inventor： Clemens Muehlenhoff , Wolfgang Raberg , Dieter Suess
Abstract: Example implementations are concerned with magnetoresistive sensors and with corresponding fabrication methods for magnetoresistive sensors. One example here relates to a magnetoresistive sensor having a layer stack. The layer stack comprises a reference layer having a reference magnetization, which is fixed and has a first magnetic orientation. The layer stack comprises a magnetically free layer. The magnetically free layer has a magnetically free magnetization. The magnetically free magnetization is variable in the presence of an external magnetic field. The magnetically free magnetization has a second magnetic orientation in a ground state. One of the first or the second magnetic orientation is oriented in-plane and the other is oriented out-of-plane. The layer stack comprises a metal multilayer. In this case, either the metal multilayer is arranged adjacent to the magnetically free layer, or the metal multilayer constitutes the magnetically free layer.
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公开(公告)号：US11519977B2
公开(公告)日：2022-12-06
申请号：US17102747
申请日：2020-11-24
Applicant: Infineon Technologies AG
Inventor： Wolfgang Raberg , Clemens Muehlenhoff , Juergen Zimmer
Abstract: A magnetoresistive sensor has a sensor plane in which the magnetoresistive sensor is sensitive to a magnetic field. The magnetoresistive sensor includes a reference layer having a reference magnetization that is fixed and that is aligned with an in-plane axis of the sensor plane; and a magnetic free layer disposed proximate to the reference layer, the magnetic free layer having a free layer magnetization aligned along an out-of-plane axis that is out-of-plane to the sensor plane. The free layer magnetization is configured to tilt away from the out-of-plane axis and towards the sensor plane in a presence of an external in-plane magnetic field.
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公开(公告)号：US20210096195A1
公开(公告)日：2021-04-01
申请号：US16948478
申请日：2020-09-21
Applicant: Infineon Technologies AG
Inventor： Clemens Muehlenhoff , Wolfgang Raberg , Dieter Suess
Abstract: Example implementations are concerned with magnetoresistive sensors and with corresponding fabrication methods for magnetoresistive sensors. One example here relates to a magnetoresistive sensor having a layer stack. The layer stack comprises a reference layer having a reference magnetization, which is fixed and has a first magnetic orientation. The layer stack comprises a magnetically free layer. The magnetically free layer has a magnetically free magnetization. The magnetically free magnetization is variable in the presence of an external magnetic field. The magnetically free magnetization has a second magnetic orientation in a ground state. One of the first or the second magnetic orientation is oriented in-plane and the other is oriented out-of-plane. The layer stack comprises a metal multilayer. In this case, either the metal multilayer is arranged adjacent to the magnetically free layer, or the metal multilayer constitutes the magnetically free layer.
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公开(公告)号：US10852369B2
公开(公告)日：2020-12-01
申请号：US16243450
申请日：2019-01-09
Applicant: Infineon Technologies AG
Inventor： Wolfgang Raberg , Clemens Muehlenhoff , Juergen Zimmer
Abstract: A magnetoresistive sensor has a sensor plane in which the magnetoresistive sensor is sensitive to a magnetic field. The magnetoresistive sensor includes a reference layer having a reference magnetization that is fixed and that is aligned with an in-plane axis of the sensor plane; and a magnetic free layer disposed proximate to the reference layer, the magnetic free layer having a free layer magnetization aligned along an out-of-plane axis that is out-of-plane to the sensor plane. The free layer magnetization is configured to tilt away from the out-of-plane axis and towards the sensor plane in a presence of an external in-plane magnetic field.
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