- 专利标题: Apparatus and methods for determining data states of memory cells
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申请号: US16908832申请日: 2020-06-23
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公开(公告)号: US10854303B2公开(公告)日: 2020-12-01
- 发明人: Tommaso Vali , Ramin Ghodsi
- 申请人: MICRON TECHNOLOGY, INC.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Dicke, Billig & Czaja, PLLC
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C16/34 ; G11C16/26 ; G11C16/08 ; G11C16/32
摘要:
Methods of operating a memory, as well as memory configured to perform such methods, might include determining a plurality of read voltages for a read operation during a precharge phase of the read operation, determining a pass voltage for the read operation during the precharge phase of the read operation, applying the pass voltage to each unselected access line of a plurality of access lines, and, for each read voltage of the plurality of read voltages, applying that read voltage to a selected access line of the plurality of access lines and sensing a data state of a memory cell connected to the selected access line.