Invention Grant
- Patent Title: Semiconductor package and method of manufacturing the same
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Application No.: US16109272Application Date: 2018-08-22
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Publication No.: US10854550B2Publication Date: 2020-12-01
- Inventor: Sheng-Ming Wang , Tien-Szu Chen , Wen-Chih Shen , Hsing-Wen Lee , Hsiang-Ming Feng
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/31 ; H01L21/48 ; H01L23/66 ; H01L23/367 ; H01P3/06 ; H01L21/683 ; H01L23/00 ; H01L25/065

Abstract:
The present disclosure provides a semiconductor substrate, including a first dielectric layer with a first surface and a second surface, a first conductive via extending between the first surface and the second surface, a first patterned conductive layer on the first surface, and a second patterned conductive layer on the second surface. The first conductive via includes a bottom pattern on the first surface and a second patterned conductive layer on the second surface. The bottom pattern has at least two geometric centers corresponding to at least two geometric patterns, respectively, and a distance between one geometric center and an intersection of the two geometrical patterns is a geometric radius. A distance between the at least two geometric centers is greater than 1.4 times the geometric radius. A method for manufacturing the semiconductor substrate described herein and a semiconductor package structure having the semiconductor substrate are also provided.
Public/Granted literature
- US20190096814A1 SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-03-28
Information query
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