Invention Grant
- Patent Title: Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
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Application No.: US15916860Application Date: 2018-03-09
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Publication No.: US10854636B2Publication Date: 2020-12-01
- Inventor: Koji Ono , Hideomi Suzawa
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Agency: Husch Blackwell LLP
- Priority: JP2001-227047 20010727
- Main IPC: H01L27/12
- IPC: H01L27/12 ; C23F4/00 ; H01L21/3213 ; H01L21/768 ; H01B1/02 ; H01B5/14 ; H01B13/00 ; H01L29/423 ; H01L29/45 ; H01L29/49

Abstract:
A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.
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