Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16672988Application Date: 2019-11-04
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Publication No.: US10854640B2Publication Date: 2020-12-01
- Inventor: Masayuki Sakakura , Yoshiaki Oikawa , Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2009-204565 20090904
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/12 ; G02F1/1345 ; G02F1/1368 ; G02F1/1343

Abstract:
The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.
Public/Granted literature
- US20200066761A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-02-27
Information query
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