Invention Grant
- Patent Title: Isolation structure for active devices
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Application No.: US16683604Application Date: 2019-11-14
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Publication No.: US10854711B2Publication Date: 2020-12-01
- Inventor: Fu-Wei Yao , Chun Lin Tsai , Jiun-Lei Jerry Yu , Man-Ho Kwan
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/06 ; H01L29/20 ; H01L29/66 ; H01L21/76 ; H01L21/761 ; H01L27/06 ; H01L27/085 ; H01L29/10 ; H01L21/8252 ; H01L21/8234

Abstract:
The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip has a channel layer disposed over a substrate and including a first material. An active layer is over the channel layer and includes a second material different than the first material. An isolation structure has a horizontally extending segment that is below the channel layer and one or more vertically extending segments that are directly over the horizontally extending segment. One or more contacts extend through the channel layer and the active layer to contact the one or more vertically extending segments.
Public/Granted literature
- US20200083324A1 ISOLATION STRUCTURE FOR ACTIVE DEVICES Public/Granted day:2020-03-12
Information query
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