Invention Grant
- Patent Title: Semiconductor device and method of forming vertical structure
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Application No.: US15665276Application Date: 2017-07-31
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Publication No.: US10854723B2Publication Date: 2020-12-01
- Inventor: Chih-Hao Wang , Wai-Yi Lien , Shi-Ning Ju , Kai-Chieh Yang , Wen-Ting Lan
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/423 ; H01L29/78 ; H01L21/311 ; H01L21/8238 ; H01L21/3105 ; H01L21/8234 ; H01L29/06

Abstract:
According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form a silicide over the drain of the vertical structure.
Public/Granted literature
- US20170358654A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING VERTICAL STRUCTURE Public/Granted day:2017-12-14
Information query
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