- 专利标题: Radio frequency low power differential frequency multiplier
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申请号: US16725682申请日: 2019-12-23
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公开(公告)号: US10855225B1公开(公告)日: 2020-12-01
- 发明人: Mazhareddin Taghivand , Soheil Golara
- 申请人: QUALCOMM Incorporated
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理机构: Patterson + Sheridan, L.L.P.
- 主分类号: H03B19/10
- IPC分类号: H03B19/10 ; H03B19/14 ; H03B5/12 ; H03D7/14 ; H04B1/00 ; H03K5/00
摘要:
Aspects of the present disclosure provide a low power differential frequency multiplier. An example frequency multiplier circuit generally includes a first set of transistors, a second set of transistors, and a resonant circuit. The first set of transistors comprises a first transistor and a second transistor, wherein each of the transistors in the first set is a first type of transistor. The second set of transistors comprises a third transistor and a fourth transistor, wherein each of the transistors in the second set is a second type of transistor. The resonant circuit has a first terminal coupled to the first set of transistors and a second terminal coupled to the second set of transistors, wherein the resonant circuit comprises an inductive element and a capacitive element coupled in parallel with the inductive element.
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