利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

9 条记录 (耗时 0.012 秒)

    PMOS-output LDO with full spectrum PSR
    1.
    发明授权
    PMOS-output LDO with full spectrum PSR 有权

    公开(公告)号：US10591938B1

    公开(公告)日：2020-03-17

    申请号：US16161111

    申请日：2018-10-16

    申请人： QUALCOMM Incorporated

    发明人： Soheil Golara

    IPC分类号： G05F1/575 ,  G05F1/59 ,  G05F3/22 ,  H03F3/45

    摘要： A PMOS-output LDO with full spectrum PSR is disclosed. In one implementation, a LDO includes a pass transistor (MO) having a source coupled to an input voltage (Vin); a noise cancelling transistor (MD) having a source coupled to the Vin, a gate coupled to a drain and a gate of the pass transistor; a source follower transistor (MSF) having a source coupled to a drain of the pass transistor, a drain coupled to the drain and gate of the noise cancelling transistor; a current sink coupled between the drain of the source follower transistor and ground; and an error amplifier having an output to drive the gate of the source follower transistor.

    Radio frequency low power differential frequency multiplier
    2.
    发明授权
    Radio frequency low power differential frequency multiplier 有权

    公开(公告)号：US10855225B1

    公开(公告)日：2020-12-01

    申请号：US16725682

    申请日：2019-12-23

    申请人： QUALCOMM Incorporated

    发明人： Mazhareddin Taghivand ,  Soheil Golara

    IPC分类号： H03B19/10 ,  H03B19/14 ,  H03B5/12 ,  H03D7/14 ,  H04B1/00 ,  H03K5/00

    摘要： Aspects of the present disclosure provide a low power differential frequency multiplier. An example frequency multiplier circuit generally includes a first set of transistors, a second set of transistors, and a resonant circuit. The first set of transistors comprises a first transistor and a second transistor, wherein each of the transistors in the first set is a first type of transistor. The second set of transistors comprises a third transistor and a fourth transistor, wherein each of the transistors in the second set is a second type of transistor. The resonant circuit has a first terminal coupled to the first set of transistors and a second terminal coupled to the second set of transistors, wherein the resonant circuit comprises an inductive element and a capacitive element coupled in parallel with the inductive element.

    PMOS-output LDO with full spectrum PSR
    3.
    发明授权
    PMOS-output LDO with full spectrum PSR 有权

    公开(公告)号：US11480986B2

    公开(公告)日：2022-10-25

    申请号：US17223425

    申请日：2021-04-06

    申请人： QUALCOMM Incorporated

    发明人： Soheil Golara

    IPC分类号： G05F1/571 ,  G05F1/59 ,  G05F1/22 ,  H03F3/45 ,  G05F1/575

    摘要： A PMOS-output LDO with full spectrum PSR is disclosed. In one implementation, a LDO includes a pass transistor (MO) having a source coupled to an input voltage (Vin); a noise cancelling transistor (MD) having a source coupled to the Vin, a gate coupled to a drain and a gate of the pass transistor; a source follower transistor (MSF) having a source coupled to a drain of the pass transistor, a drain coupled to the drain and gate of the noise cancelling transistor; a current sink coupled between the drain of the source follower transistor and ground; and an error amplifier having an output to drive the gate of the source follower transistor.

    PMOS-output LDO with full spectrum PSR
    4.
    发明授权
    PMOS-output LDO with full spectrum PSR 有权

    公开(公告)号：US11003202B2

    公开(公告)日：2021-05-11

    申请号：US16808806

    申请日：2020-03-04

    申请人： QUALCOMM Incorporated

    发明人： Soheil Golara

    IPC分类号： G05F1/571 ,  G05F1/59 ,  G05F3/22 ,  H03F3/45 ,  G05F1/575

    摘要： A PMOS-output LDO with full spectrum PSR is disclosed. In one implementation, a LDO includes a pass transistor (MO) having a source coupled to an input voltage (Vin); a noise cancelling transistor (MD) having a source coupled to the Vin, a gate coupled to a drain and a gate of the pass transistor; a source follower transistor (MSF) having a source coupled to a drain of the pass transistor, a drain coupled to the drain and gate of the noise cancelling transistor; a current sink coupled between the drain of the source follower transistor and ground; and an error amplifier having an output to drive the gate of the source follower transistor.

    Relaxation oscillator with improved temperature stability
    5.
    发明授权
    Relaxation oscillator with improved temperature stability 有权

    公开(公告)号：US10693443B1

    公开(公告)日：2020-06-23

    申请号：US16589309

    申请日：2019-10-01

    申请人： QUALCOMM Incorporated

    发明人： Soheil Golara

    IPC分类号： H03K3/011 ,  H03K3/0231

    摘要： Certain aspects of the present disclosure generally relate to a low-power relaxation oscillator. Certain aspects provide a circuit for generating an oscillating signal. The circuit generally includes a comparator, a first current source coupled to a reference potential node, a first resistive element coupled between the first current source and a voltage rail, a node between the first current source and the first resistive element being selectively coupled to a first input terminal of the comparator, a second current source coupled between a second input terminal of the comparator and the voltage rail, and a first capacitive element selectively coupled between the second input terminal of the comparator and the reference potential node.

    Low power differential crystal oscillator circuit
    6.
    发明授权
    Low power differential crystal oscillator circuit 有权

    公开(公告)号：US11190135B2

    公开(公告)日：2021-11-30

    申请号：US16674996

    申请日：2019-11-05

    申请人： QUALCOMM Incorporated

    发明人： Soheil Golara

    IPC分类号： H03B5/36

    摘要： Aspects of the disclosure are directed to a low power differential circuit. In accordance with one aspect, the low power differential circuit includes a crystal oscillator to generate a differential sinusoidal waveform, the crystal oscillator having a first terminal and a second terminal; a first capacitor coupled to the first terminal; a first inverter including a first input coupled to the first terminal and a first output coupled to the first capacitor; a second capacitor coupled to the second terminal; and a second inverter including a second input coupled to the second terminal and a second output coupled to the second capacitor, wherein the first inverter and the second inverter generate a synchronous square wave signal.

    Compensated low dropout with high power supply rejection ratio and short circuit protection
    9.
    发明授权
    Compensated low dropout with high power supply rejection ratio and short circuit protection 有权

    公开(公告)号：US10175706B2

    公开(公告)日：2019-01-08

    申请号：US15186411

    申请日：2016-06-17

    申请人： QUALCOMM Incorporated

    发明人： Soheil Golara ,  Babak Vakili-Amini

    IPC分类号： G05F1/575 ,  G05F1/573

    摘要： Disclosed is a low dropout (LDO) voltage regulator that includes a differential amplifier configured to amplify a differential between a reference voltage and a regulated output voltage, a pass transistor coupled to the differential amplifier and driven by an output of the differential amplifier, a compensation capacitor coupled to an output node of the differential amplifier, and an auxiliary amplifier, wherein an output node of the auxiliary amplifier is coupled to the compensation capacitor, and wherein an input node of the auxiliary amplifier is coupled to the pass transistor.