Invention Grant
- Patent Title: Manufacturing method of semiconductor device
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Application No.: US15664367Application Date: 2017-07-31
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Publication No.: US10861733B2Publication Date: 2020-12-08
- Inventor: Masakatsu Ohno , Seiji Yasumoto , Naoki Ikezawa , Satoru Idojiri , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2016-156143 20160809
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/683 ; H01L21/78 ; H01L21/48 ; H01L29/66 ; H01L29/786 ; H01L21/02 ; G02F1/1335 ; G02F1/1343 ; G02F1/1368 ; H01L27/32 ; H01L51/00 ; H01L51/56

Abstract:
The yield of a manufacturing process of a display device is increased. The productivity of a display device is increased. A hydrogen-containing layer is formed over a substrate. Then, an oxygen-containing layer is formed over the hydrogen-containing layer. After that, a first layer is formed over the oxygen-containing layer with the use of a material containing a resin or a resin precursor. Subsequently, first heat treatment is performed on the first layer, so that a resin layer is formed. Next, a layer to be peeled is formed over the resin layer. The layer to be peeled and the substrate are separated from each other. The first heat treatment is performed in an oxygen-containing atmosphere.
Public/Granted literature
- US20180047609A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2018-02-15
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