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公开(公告)号：US20230263018A1
公开(公告)日：2023-08-17
申请号：US18138866
申请日：2023-04-25
IPC分类号： H10K59/126 , H01L27/12 , H10K50/844 , H10K50/842 , H10K59/38 , H10K59/124 , H10K59/121 , H10K71/00 , H10K71/50 , H10K71/80 , H10K71/40 , H10K77/10 , H01L29/24 , H01L29/66 , H01L29/786 , B23K26/0622 , B23K26/04 , B23K26/06 , B23K26/08
CPC分类号： H10K59/126 , H01L27/1225 , H01L27/1266 , H10K50/844 , H10K50/8426 , H10K59/38 , H10K59/124 , H10K59/1213 , H10K71/00 , H10K71/50 , H10K71/80 , H10K71/421 , H10K77/111 , H01L29/24 , H01L29/66969 , H01L29/78603 , H01L29/7869 , B23K26/0622 , B23K26/04 , B23K26/0617 , B23K26/0643 , B23K26/0648 , B23K26/083 , Y02E10/549 , Y02P70/50 , H10K50/18
摘要： A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
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公开(公告)号：US11133491B2
公开(公告)日：2021-09-28
申请号：US16493104
申请日：2018-03-06
发明人： Seiji Yasumoto , Kayo Kumakura , Yuka Sato , Satoru Idojiri , Hiroki Adachi , Kenichi Okazaki
摘要： A high-yield fabricating method of a semiconductor device including a peeling step is provided.
A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.-
公开(公告)号：US10923350B2
公开(公告)日：2021-02-16
申请号：US15687915
申请日：2017-08-28
摘要： The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of a semiconductor device is increased. A semiconductor device is manufactured by forming a first material layer over a substrate; forming a second material layer over the first material layer; and separating the first material layer and the second material layer from each other; and heating the first material layer and the second material layer that are stacked before the separation. The first material layer includes a gas containing hydrogen, oxygen, or hydrogen and oxygen (e.g., water) in a metal oxide, for example. The second material layer includes a resin. The first material layer and the second material layer are separated from each other by a break of a hydrogen bond. Specifically water is separated out at the interface or near the interface, and then adhesion is reduced due to the water present.
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公开(公告)号：US10680020B2
公开(公告)日：2020-06-09
申请号：US15473962
申请日：2017-03-30
发明人： Shunpei Yamazaki , Yasuharu Hosaka , Satoru Idojiri , Kenichi Okazaki , Hiroki Adachi , Daisuke Kubota
IPC分类号： H01L27/12 , H01L21/683 , H01L29/66 , H01L29/786 , H01L27/32
摘要： A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 μm and less than or equal to 3 μm is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.
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公开(公告)号：US10236408B2
公开(公告)日：2019-03-19
申请号：US15687855
申请日：2017-08-28
摘要： The yield of a manufacturing process of a semiconductor device is increased. The productivity of a semiconductor device is increased. A first material layer is formed over a substrate, a second material layer is formed over the first material layer, and the first material layer and the second material layer are separated from each other, so that a semiconductor device is manufactured. In addition, a stack including the first material layer and the second material layer is preferably heated before the separation. The first material layer includes one or more of hydrogen, oxygen, and water. The first material layer includes a metal oxide, for example. The second material layer includes a resin (e.g., polyimide or acrylic). The first material layer and the second material layer are separated from each other by cutting a hydrogen bond. The first material layer and the second material layer are separated from each other in such a manner that water separated out by heat treatment at an interface between the first material layer and the second material layer or in the vicinity of the interface is irradiated with light.
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公开(公告)号：US09805953B2
公开(公告)日：2017-10-31
申请号：US14699576
申请日：2015-04-29
IPC分类号： B32B38/10 , H01L21/463 , H01L21/67 , H01L21/683 , B32B43/00
CPC分类号： H01L21/463 , B32B38/10 , B32B43/006 , H01L21/67092 , H01L21/6838 , Y10T156/1132 , Y10T156/1168 , Y10T156/1184 , Y10T156/1928 , Y10T156/1944 , Y10T156/1961 , Y10T156/1967 , Y10T156/1978
摘要： A wedge-shaped jig (6) is inserted into a gap between a first substrate (21) and a second substrate (22) at a corner (221) of the second substrate (22) and separation of the attached first substrate (21) and second substrate (22) starts to proceed; then, a second suction pad (53) of a second suction portion (51), which is the closest to the corner (221), moves upward. Then, first suction pads (43) of first suction portions (41a), (41b), and (41c) sequentially move upward such that one side of the second substrate (22) separates from the stacked body. Although the second substrate (22) warps as the separation of the second substrate (22) proceeds, each of the plurality of first suction pads (43) elastically deforms. Therefore, the first suction pads (43) can be prevented from being detached from the second substrate (22), and the substrate (22) can be securely separated from the stacked body.
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公开(公告)号：US11637009B2
公开(公告)日：2023-04-25
申请号：US16332546
申请日：2017-09-29
IPC分类号： H01L21/02 , H01L21/304 , H01L21/306 , B23K26/38
摘要： A glass substrate is reused. The mass productivity of a semiconductor device is increased.
A glass substrate one surface of which includes a first material and a second material. The first material includes one or both of a metal and a metal oxide. The second material includes one or both of a resin and a decomposition product of a resin. A cleaning method of a glass substrate, which includes a step of preparing the glass substrate one surface of which includes a first material and a second material and a step of exposing the first material by removing at least part of the second material.-
公开(公告)号：US11107846B2
公开(公告)日：2021-08-31
申请号：US16810162
申请日：2020-03-05
发明人： Hideaki Kuwabara , Hiroki Adachi , Satoru Idojiri
IPC分类号： H01L27/12 , H01L21/67 , H01L21/683
摘要： A technique is described in which a transistor formed using an oxide semiconductor film, a transistor formed using a polysilicon film, a transistor formed using an amorphous silicon film or the like, a transistor formed using an organic semiconductor film, a light-emitting element, or a passive element is separated from a glass substrate by light or heat. An oxide layer is formed over a light-transmitting substrate, a metal layer is selectively formed over the oxide layer, a resin layer is formed over the metal layer, an element layer is formed over the resin layer, a flexible film is fixed to the element layer, the resin layer and the metal layer are irradiated with light through the light-transmitting substrate, the light-transmitting substrate is separated, and a bottom surface of the metal layer is made bare.
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公开(公告)号：US10763322B2
公开(公告)日：2020-09-01
申请号：US16509819
申请日：2019-07-12
IPC分类号： H01L27/32 , H01L51/00 , H01L51/56 , H01L51/52 , H01L27/12 , H01L29/24 , H01L29/66 , H01L29/786 , B23K26/0622 , B23K26/04 , B23K26/06 , B23K26/08 , H01L51/50 , H01L41/314
摘要： A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
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公开(公告)号：US10586817B2
公开(公告)日：2020-03-10
申请号：US15463487
申请日：2017-03-20
发明人： Hideaki Kuwabara , Hiroki Adachi , Satoru Idojiri
IPC分类号： H01L21/00 , H01L27/12 , H01L21/67 , H01L21/683
摘要： A technique is described in which a transistor formed using an oxide semiconductor film, a transistor formed using a polysilicon film, a transistor formed using an amorphous silicon film or the like, a transistor formed using an organic semiconductor film, a light-emitting element, or a passive element is separated from a glass substrate by light or heat. An oxide layer is formed over a light-transmitting substrate, a metal layer is selectively formed over the oxide layer, a resin layer is formed over the metal layer, an element layer is formed over the resin layer, a flexible film is fixed to the element layer, the resin layer and the metal layer are irradiated with light through the light-transmitting substrate, the light-transmitting substrate is separated, and a bottom surface of the metal layer is made bare.
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