Invention Grant
- Patent Title: Multi-die memory device
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Application No.: US16823122Application Date: 2020-03-18
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Publication No.: US10885971B2Publication Date: 2021-01-05
- Inventor: Scott C. Best , Ming Li
- Applicant: Rambus Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Peninsula Patent Group
- Agent Lance Kreisman
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C11/4093 ; G11C5/04 ; H01L25/065 ; H01L25/10 ; H01L25/18 ; H01L23/48 ; G11C11/406 ; G11C11/4096 ; H01L23/00

Abstract:
A memory is disclosed that includes a logic die having first and second memory interface circuits. A first memory die is stacked with the logic die, and includes first and second memory arrays. The first memory array couples to the first memory interface circuit. The second memory array couples to the second interface circuit. A second memory die is stacked with the logic die and the first memory die. The second memory die includes third and fourth memory arrays. The third memory array couples to the first memory interface circuit. The fourth memory array couples to the second memory interface circuit. Accesses to the first and third memory arrays are carried out independently from accesses to the second and fourth memory arrays.
Public/Granted literature
- US20200321047A1 MULTI-DIE MEMORY DEVICE Public/Granted day:2020-10-08
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