Invention Grant
- Patent Title: Methods of forming crystalline semiconductor material, and methods of forming transistors
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Application No.: US16112410Application Date: 2018-08-24
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Publication No.: US10886130B2Publication Date: 2021-01-05
- Inventor: Manuj Nahar , Darwin Franseda Fan , Junting Liu-Norrod , Michael Mutch
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/20 ; H01L21/02 ; C23C16/56 ; H01L21/306 ; H01L29/66 ; H01L29/78 ; H01L27/108 ; C23C16/24 ; C23C16/06 ; H01L27/24
Abstract:
Some embodiments include a method of forming crystalline semiconductor material. A template is provided to have a polycrystalline region along a surface. Semiconductor material is deposited along the surface under conditions which grow crystalline semiconductor structures from grains of the polycrystalline region. The deposition is conducted at a temperature of less than or equal to 500° C. Some embodiments include a method of forming a transistor. A template is provided to have a polycrystalline region along a surface. Semiconductor material is deposited along the surface under conditions which grow crystalline semiconductor structures from grains of the polycrystalline region. The semiconductor material includes germanium. The crystalline semiconductor structures are doped to form a configuration having a first portion over a second portion. Insulative material is formed adjacent the second portion. A transistor gate is formed along the insulative material.
Public/Granted literature
- US20200066513A1 Methods of Forming Crystalline Semiconductor Material, and Methods of Forming Transistors Public/Granted day:2020-02-27
Information query
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