Invention Grant
- Patent Title: Device with highly active acceptor doping and method of production thereof
-
Application No.: US16109258Application Date: 2018-08-22
-
Publication No.: US10886178B2Publication Date: 2021-01-05
- Inventor: Tek Po Rinus Lee , Annie Levesque , Qun Gao , Hui Zang , Rishikesh Krishnan , Bharat Krishnan , Curtis Durfee
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner P.C.
- Main IPC: H01L29/167
- IPC: H01L29/167 ; H01L21/8234 ; H01L27/088 ; H01L29/78 ; H01L23/532 ; H01L21/02 ; H01L29/40 ; H01L23/535

Abstract:
A device including a triple-layer EPI stack including SiGe, Ge, and Si, respectively, with Ga confined therein, and method of production thereof. Embodiments include an EPI stack including a SiGe layer, a Ge layer, and a Si layer over a plurality of fins, the EPI stack positioned between and over a portion of sidewall spacers, wherein the Si layer is a top layer capping the Ge layer, and wherein the Ge layer is a middle layer capping the SiGe layer underneath; and a Ga layer in a portion of the Ge layer between the SiGe layer and the Si layer.
Public/Granted literature
- US20200066593A1 DEVICE WITH HIGHLY ACTIVE ACCEPTOR DOPING AND METHOD OF PRODUCTION THEREOF Public/Granted day:2020-02-27
Information query
IPC分类: