Invention Grant
- Patent Title: Methods for producing thin-film layers and microsystems having thin-film layers
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Application No.: US16269225Application Date: 2019-02-06
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Publication No.: US10889492B2Publication Date: 2021-01-12
- Inventor: Alfred Sigl , Wolfgang Friza , Stefan Geissler
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Priority: DE102018201931 20180207,DE102018214017 20180820
- Main IPC: B81C1/00
- IPC: B81C1/00 ; H04R19/00 ; H01L21/311 ; H01L21/677 ; H01L23/00

Abstract:
A method for producing a thin-film layer includes providing a layer stack on a carrier substrate, wherein the layer stack includes a carrier layer and a sacrificial layer, and wherein the sacrificial layer includes areas in which the carrier layer is exposed. The method includes providing the thin-film layer on the layer stack, such that the thin-film layer bears on the sacrificial layer and, in the areas of the sacrificial layer in which the carrier layer is exposed, against the carrier layer. The method includes at least partly removing the sacrificial layer from the thin-film layer in order to eliminate a contact between the thin-film layer and the sacrificial layer in some areas. The method also includes detaching the thin-film layer from the carrier layer.
Public/Granted literature
- US20190241431A1 METHODS FOR PRODUCING THIN-FILM LAYERS AND MICROSYSTEMS HAVING THIN-FILM LAYERS Public/Granted day:2019-08-08
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