Invention Grant
- Patent Title: Wiring structure and method for manufacturing the same
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Application No.: US16236207Application Date: 2018-12-28
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Publication No.: US10892213B2Publication Date: 2021-01-12
- Inventor: Wen Hung Huang , Li-Yu Hsieh , Yan Wen Chung
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48 ; H01L21/66 ; H01L23/544 ; H01L21/683 ; H05K3/40 ; H05K3/36 ; H01L23/00

Abstract:
A wiring structure includes an upper conductive structure, a lower conductive structure, an adhesion layer and at least one outer via. The upper conductive structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The lower conductive structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The adhesion layer is interposed between the upper conductive structure and the lower conductive structure to bond the upper conductive structure and the lower conductive structure together. The outer via extends through at least a portion of the upper conductive structure and the adhesion layer, and electrically connected to the circuit layer of the lower conductive structure.
Public/Granted literature
- US20200211945A1 WIRING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2020-07-02
Information query
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