- 专利标题: Magnetic field controlled transistor
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申请号: US16051457申请日: 2018-07-31
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公开(公告)号: US10892299B2公开(公告)日: 2021-01-12
- 发明人: Cezar Bogdan Zota , Bernd W. Gotsmann
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Otterstedt, Wallace & Kammer, LLP
- 代理商 Daniel Morris
- 主分类号: H01L27/22
- IPC分类号: H01L27/22 ; H01L43/02 ; H03K19/18 ; H01L43/10 ; H03F15/00 ; H01L43/08
摘要:
A magnetic field controlled transistor circuit includes a first electrode, a second electrode, and a channel including a magneto-resistive material. The channel is arranged between the first and second electrodes and electrically coupled to the first and second electrodes. The transistor circuit further includes a third electrode, a fourth electrode, and a control layer including an electrically conductive material. The control layer is arranged between the third and fourth electrodes and electrically coupled to the third and fourth electrodes. In addition, an insulating layer including an insulating material is provided. The insulating layer is arranged between the channel and the control layer and configured to electrically insulate the channel from the control layer. A related method for operating a transistor circuit and a corresponding design structure are also provided.
公开/授权文献
- US20200043978A1 MAGNETIC FIELD CONTROLLED TRANSISTOR 公开/授权日:2020-02-06