Invention Grant
- Patent Title: Fin field effect transistor having crystalline titanium germanosilicide stressor layer
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Application No.: US16792120Application Date: 2020-02-14
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Publication No.: US10892365B2Publication Date: 2021-01-12
- Inventor: Cheng-Yeh Huang , Te-Chang Hsu , Chun-Jen Huang , Che-Hsien Lin , Yao-Jhan Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW107134069A 20180927
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/04 ; H01L29/10 ; H01L29/161 ; H01L29/51 ; H01L29/49 ; H01L21/768 ; H01L21/324
Abstract:
A semiconductor structure includes a semiconductor substrate, at least a silicon germanium (SiGe) epitaxial region disposed in the semiconductor substrate, and a contact structure disposed on the SiGe epitaxial region. The contact structure includes a titanium nitride (TiN) barrier layer and a metal layer surrounded by the TiN barrier layer. A crystalline titanium germanosilicide stressor layer is disposed in the SiGe epitaxial region and between the TiN barrier layer and the SiGe epitaxial region.
Public/Granted literature
- US20200185525A1 FIN FIELD EFFECT TRANSISTOR HAVING CRYSTALLINE TITANIUM GERMANOSILICIDE STRESSOR LAYER Public/Granted day:2020-06-11
Information query
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