Invention Grant
- Patent Title: Nonvolatile memory device storing data in sub-blocks and operating method thereof
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Application No.: US16412953Application Date: 2019-05-15
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Publication No.: US10902922B2Publication Date: 2021-01-26
- Inventor: Hyun Seo , Kui Han Ko , Jin-Young Kim , Il Han Park , Bong Soon Lim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Hamess, Dickey and Pierce, P.L.C.
- Priority: KR10-2018-0063282 20180601
- Main IPC: G11C16/16
- IPC: G11C16/16 ; G11C16/08

Abstract:
A nonvolatile memory includes a first sub-block defined by a first string select line and a first word line; a second sub-block defined by a second string select line different from the first string select line and a second word line different from the first word line; a first vacant block defined by the first string select line and the second word line; and a second vacant block defined by the second string select line and the first word line. First data is programmed in the first sub-block with, second data is programmed in the second sub-block, and no data is programmed in the first vacant block and the second vacant block.
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