发明授权
- 专利标题: Display device, semiconductor device, and method of manufacturing display device
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申请号: US16715453申请日: 2019-12-16
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公开(公告)号: US10903251B2公开(公告)日: 2021-01-26
- 发明人: Hitoshi Tsuno , Koichi Nagasawa
- 申请人: Sony Corporation
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: K&L Gates LLP
- 优先权: JP2012-135458 20120615,JP2013-046895 20130308
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L27/12 ; H01L27/32 ; H05B33/10 ; G02F1/1362 ; H05B33/22
摘要:
A display device according to the present disclosure includes: a transistor section (100) that includes a gate insulating film (130), a semiconductor layer (140), and a gate electrode layer (120), the semiconductor layer being laminated on the gate insulating film, the gate electrode film being laminated on an opposite side to the semiconductor layer of the gate insulating film; a first capacitor section (200) that includes a first metal film (210) and a second metal film (220), the first metal film being disposed at a same level as wiring layers (161, 162) that are electrically connected to the semiconductor layer and is disposed over the transistor section, the second metal film being disposed over the first metal film with a first interlayer insulating film (152) in between; and a display element that is configured to be controlled by the transistor section.
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