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14 条记录 (耗时 0.019 秒)

    Optical compensation element, liquid crystal light valve assembly, and liquid crystal projector apparatus
    1.
    发明授权
    Optical compensation element, liquid crystal light valve assembly, and liquid crystal projector apparatus 有权

    公开(公告)号：US10928679B2

    公开(公告)日：2021-02-23

    申请号：US16326855

    申请日：2017-07-26

    申请人： SONY CORPORATION

    发明人： Akiko Toriyama ,  Koichi Nagasawa ,  Tsuyoshi Okazaki

    IPC分类号： G02F1/13363 ,  G02B5/30 ,  H04N9/31 ,  G02F1/1335

    摘要： An optical compensation element includes a first member that includes a first transparent substrate, a first alignment film, and a first phase difference layer and a second member that includes a second transparent substrate, a second alignment film, and a second phase difference layer. In the optical compensation element, a first inorganic barrier layer is formed on a surface of the first phase difference layer, where the surface faces the second member a second inorganic barrier layer is formed on a surface of the second phase difference layer, where the surface faces the second member and the first inorganic barrier layer and the second inorganic barrier layer are bonded by an adhesive layer.

    Display device, semiconductor device, and method of manufacturing display device
    2.
    发明授权
    Display device, semiconductor device, and method of manufacturing display device 有权

    公开(公告)号：US10566356B2

    公开(公告)日：2020-02-18

    申请号：US16014119

    申请日：2018-06-21

    申请人： Sony Corporation

    发明人： Hitoshi Tsuno ,  Koichi Nagasawa

    IPC分类号： H01L27/108 ,  H01L27/12 ,  H01L27/32 ,  H05B33/10 ,  G02F1/1362 ,  H05B33/22

    摘要： A display device according to the present disclosure includes: a transistor section (100) that includes a gate insulating film (130), a semiconductor layer (140), and a gate electrode layer (120), the semiconductor layer being laminated on the gate insulating film, the gate electrode film being laminated on an opposite side to the semiconductor layer of the gate insulating film; a first capacitor section (200) that includes a first metal film (210) and a second metal film (220), the first metal film being disposed at a same level as wiring layers (161, 162) that are electrically connected to the semiconductor layer and is disposed over the transistor section, the second metal film being disposed over the first metal film with a first interlayer insulating film (152) in between; and a display element that is configured to be controlled by the transistor section.

    Display device, semiconductor device, and method of manufacturing display device
    6.
    发明授权
    Display device, semiconductor device, and method of manufacturing display device 有权
    显示装置，半导体装置以及制造显示装置的方法

    公开(公告)号：US09508758B2

    公开(公告)日：2016-11-29

    申请号：US14405859

    申请日：2013-05-15

    申请人： SONY CORPORATION

    发明人： Hitoshi Tsuno ,  Koichi Nagasawa

    IPC分类号： H01L27/108 ,  H01L27/12 ,  H05B33/22 ,  H01L27/32 ,  H05B33/10 ,  G02F1/1362

    CPC分类号： H01L27/1255 ,  G02F1/136213 ,  G02F1/136227 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1262 ,  H01L27/3258 ,  H01L27/326 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L27/3279 ,  H01L2227/323 ,  H05B33/10 ,  H05B33/22

    摘要： A display device according to the present disclosure includes: a transistor section that includes a gate insulating film, a semiconductor layer, and a gate electrode layer, the semiconductor layer being laminated on the gate insulating film, the gate electrode film being laminated on an opposite side to the semiconductor layer of the gate insulating film; a first capacitor section that includes a first metal film and a second metal film, the first metal film being disposed at a same level as wiring layers that are electrically connected to the semiconductor layer and is disposed over the transistor section, the second metal film being disposed over the first metal film with a first interlayer insulating film in between; and a display element that is configured to be controlled by the transistor section.

    摘要翻译： 根据本公开的显示装置包括：晶体管部分，其包括栅极绝缘膜，半导体层和栅极电极层，所述半导体层层压在所述栅极绝缘膜上，所述栅极电极膜层压在相反的栅极绝缘膜上 一侧到栅极绝缘膜的半导体层; 第一电容器部分，其包括第一金属膜和第二金属膜，所述第一金属膜设置在与所述半导体层电连接并布置在所述晶体管部分上方的布线层的相同电平处，所述第二金属膜为 设置在第一金属膜之间，其间具有第一层间绝缘膜; 以及被配置为由晶体管部分控制的显示元件。

    Display device, semiconductor device, and method of manufacturing display device
    10.
    发明授权
    Display device, semiconductor device, and method of manufacturing display device 有权

    公开(公告)号：US10903251B2

    公开(公告)日：2021-01-26

    申请号：US16715453

    申请日：2019-12-16

    申请人： Sony Corporation

    发明人： Hitoshi Tsuno ,  Koichi Nagasawa

    IPC分类号： H01L27/108 ,  H01L27/12 ,  H01L27/32 ,  H05B33/10 ,  G02F1/1362 ,  H05B33/22

    摘要： A display device according to the present disclosure includes: a transistor section (100) that includes a gate insulating film (130), a semiconductor layer (140), and a gate electrode layer (120), the semiconductor layer being laminated on the gate insulating film, the gate electrode film being laminated on an opposite side to the semiconductor layer of the gate insulating film; a first capacitor section (200) that includes a first metal film (210) and a second metal film (220), the first metal film being disposed at a same level as wiring layers (161, 162) that are electrically connected to the semiconductor layer and is disposed over the transistor section, the second metal film being disposed over the first metal film with a first interlayer insulating film (152) in between; and a display element that is configured to be controlled by the transistor section.