- Patent Title: High voltage semiconductor device and manufacturing method thereof
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Application No.: US16813768Application Date: 2020-03-10
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Publication No.: US10903334B2Publication Date: 2021-01-26
- Inventor: Shih-Yin Hsiao , Kuan-Liang Liu , Ching-Chung Yang , Ping-Hung Chiang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201610917428 20161021
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/423 ; H01L29/78 ; H01L29/06

Abstract:
A high voltage semiconductor device and a manufacturing method thereof are provided in the present invention. A recess is formed in a semiconductor substrate, and a gate dielectric layer and a main gate structure are formed in the recess. Therefore, the high voltage semiconductor device formed by the manufacturing method of the present invention may include the main gate structure lower than a top surface of an isolation structure formed in the semiconductor substrate. Problems about integrated manufacturing processes of the high voltage semiconductor device and other kinds of semiconductor devices when the gate structure is relatively high because of the thicker gate dielectric layer required in the high voltage semiconductor device may be improved accordingly.
Public/Granted literature
- US20200212201A1 HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-07-02
Information query
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