Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16371989Application Date: 2019-04-01
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Publication No.: US10903354B2Publication Date: 2021-01-26
- Inventor: Yoshito Nakazawa
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2018-080189 20180418
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/40 ; H01L29/66 ; H01L29/04 ; H01L29/06 ; H01L29/417 ; H01L29/739 ; H01L29/861 ; H01L21/265 ; H01L27/085
Abstract:
A semiconductor device includes: a cell region provided in a main surface of a semiconductor substrate composed of a crystal plane (100); a field insulating film embedded in the semiconductor substrate; and an annular p-type well region surrounding the cell region. The p-type well region includes a first region extending in a direction, a second region extending in a direction, and a third region connecting the first region and the second region and having an arc shape in plan view. The field insulating film has an opening provided in the p-type well region and extending along the p-type well region in plan view. The opening includes a first opening extending in the direction in the first region and a second opening extending in the direction in the second region, and the first opening and the second opening are divided from each other in the third region.
Public/Granted literature
- US20190326432A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-10-24
Information query
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