Invention Grant
- Patent Title: Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound
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Application No.: US16251236Application Date: 2019-01-18
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Publication No.: US10913754B2Publication Date: 2021-02-09
- Inventor: Gyu-hee Park , Youn-soo Kim , Jae-soon Lim , Youn-joung Cho , Kazuki Harano , Haruyoshi Sato , Tsubasa Shiratori , Naoki Yamada
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2015-0096785 20150707,KR10-2018-0031127 20180316
- Main IPC: C07F5/00
- IPC: C07F5/00 ; C23C16/455 ; C23C16/34 ; H01L27/28 ; H01L51/00 ; C23C16/40 ; H01L21/02 ; H01L29/78 ; H01L51/05 ; H01L29/66
Abstract:
A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.
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