- 专利标题: Manufacturing method of semiconductor device
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申请号: US15687915申请日: 2017-08-28
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公开(公告)号: US10923350B2公开(公告)日: 2021-02-16
- 发明人: Shunpei Yamazaki , Masataka Sato , Seiji Yasumoto , Kayo Kumakura , Satoru Idojiri
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Atsugi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi
- 代理机构: Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权: JP2016-170378 20160831,JP2016-173345 20160906,JP2016-198947 20161007
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/67 ; H01L21/78 ; H01L27/12 ; H01L29/66
摘要:
The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of a semiconductor device is increased. A semiconductor device is manufactured by forming a first material layer over a substrate; forming a second material layer over the first material layer; and separating the first material layer and the second material layer from each other; and heating the first material layer and the second material layer that are stacked before the separation. The first material layer includes a gas containing hydrogen, oxygen, or hydrogen and oxygen (e.g., water) in a metal oxide, for example. The second material layer includes a resin. The first material layer and the second material layer are separated from each other by a break of a hydrogen bond. Specifically water is separated out at the interface or near the interface, and then adhesion is reduced due to the water present.
公开/授权文献
- US20180061639A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 公开/授权日:2018-03-01
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