Invention Grant
- Patent Title: MEMS structure with an etch stop layer buried within inter-dielectric layer
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Application No.: US15295997Application Date: 2016-10-17
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Publication No.: US10927000B2Publication Date: 2021-02-23
- Inventor: Li-Che Chen , Te-Yuan Wu , Chia-Huei Lin , Hui-Min Wu , Kun-Che Hsieh , Kuan-Yu Wang , Chung-Yi Chiu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81C1/00

Abstract:
A MEMS structure includes a substrate, an inter-dielectric layer on a front side of the substrate, a MEMS component on the inter-dielectric layer, and a chamber disposed within the inter-dielectric layer and through the substrate. The chamber has an opening at a backside of the substrate. An etch stop layer is disposed within the inter-dielectric layer. The chamber has a ceiling opposite to the opening and a sidewall joining the ceiling. The sidewall includes a portion of the etch stop layer.
Public/Granted literature
- US20170036905A1 MEMS STRUCTURE WITH AN ETCH STOP LAYER BURIED WITHIN INTER-DIELECTRIC LAYER Public/Granted day:2017-02-09
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