- 专利标题： Semiconductor device and method of manufacturing the same
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申请号： US16276442申请日： 2019-02-14
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公开(公告)号： US10930657B2公开(公告)日： 2021-02-23
- 发明人: Kang Sik Choi
- 申请人： SK hynix Inc.
- 申请人地址： KR Icheon-si
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Icheon-si
- 代理机构： William Park & Associates Ltd.
- 优先权： KR10-2017-0025707 20170227
- 主分类号： H01L27/11556
- IPC分类号： H01L27/11556 ; H01L27/11582 ; H01L29/06 ; H01L27/11565 ; H01L29/08 ; H01L27/11519 ; H01L29/78
摘要：
Provided herein may be a semiconductor device. The semiconductor device may include a stack. The semiconductor device may include channel layers including channel patterns passing through the stack, dummy channel patterns passing through the stack, and a coupling pattern which may be disposed below the stack and couples the channel patterns with the dummy channel patterns. The semiconductor device may include a bit line which is disposed on the stack and coupled with the channel patterns. The semiconductor device may include a well pick-up line which is disposed on the stack and coupled with the dummy channel patterns.
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