Invention Grant
- Patent Title: Image sensor including a shield structure
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Application No.: US16390325Application Date: 2019-04-22
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Publication No.: US10930685B2Publication Date: 2021-02-23
- Inventor: Doowon Kwon , Ingyu Baek
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, PC
- Priority: KR10-2018-0096201 20180817
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L23/522 ; H01L49/02 ; H01L27/148 ; H04N5/232
Abstract:
Disclosed is an image sensor comprising a first substrate including a plurality of pixels, a photoelectric conversion region in the first substrate at each of the pixels, a first capacitor on the first substrate, and a shield structure spaced apart from and surrounding the first capacitor.
Public/Granted literature
- US20200058688A1 IMAGE SENSOR Public/Granted day:2020-02-20
Information query
IPC分类:
