Invention Grant
- Patent Title: Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
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Application No.: US15929592Application Date: 2020-05-12
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Publication No.: US10937880B2Publication Date: 2021-03-02
- Inventor: Daniel E. Grupp , Daniel J. Connelly
- Applicant: Acorn Semi, LLC
- Applicant Address: US CA Palo Alto
- Assignee: Acorn Semi, LLC
- Current Assignee: Acorn Semi, LLC
- Current Assignee Address: US CA Palo Alto
- Agency: Ascenda Law Group, PC
- Main IPC: H01L29/45
- IPC: H01L29/45 ; H01L21/28 ; H01L21/285 ; H01L29/08 ; H01L29/47 ; H01L29/66 ; H01L29/812 ; H01L29/78 ; H01L29/16 ; H01L29/161 ; H01L29/872 ; H01L29/80
Abstract:
An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor.
Public/Granted literature
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