Invention Grant
- Patent Title: Apparatus and method for testing an interconnect circuit and method for manufacturing a semiconductor device including the test method
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Application No.: US15958387Application Date: 2018-04-20
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Publication No.: US10942216B2Publication Date: 2021-03-09
- Inventor: Sung-Yeol Kim , Jae-Hong Kim , Kyung-Min Lee , Mee-Hyun Lim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2017-0132750 20171012
- Main IPC: G01R31/28
- IPC: G01R31/28 ; G01N21/95 ; G01R1/07 ; G02F1/13 ; G01N21/88

Abstract:
An interconnect circuit testing apparatus including: an electric signal generating circuit for generating an electric signal; a first electrode arranged at a first region of a substrate, wherein the substrate includes an interconnect circuit, an upper surface and a lower surface; a second electrode arranged at a second region of the substrate; and a sensor for detecting an electric field emitted from the first region or the second region when the electric signal is applied to the substrate through the first electrode and the second electrode.
Public/Granted literature
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