- 专利标题: Circuit and method to enhance efficiency of memory
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申请号: US16245857申请日: 2019-01-11
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公开(公告)号: US10950658B2公开(公告)日: 2021-03-16
- 发明人: Hung-Chang Yu
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: WPAT, P.C., Intellectual Property Attorneys
- 代理商 Anthony King
- 主分类号: G11C11/16
- IPC分类号: G11C11/16 ; H01L27/22 ; H01L27/10 ; H01L27/24 ; G11C11/15
摘要:
A circuit includes: a first node to receive a first current; a first resistive element receiving a first branch current of the first current; first transistors each including a first terminal connected to the second end of the first resistive element; a second resistive element connected to the first node and receiving a second branch current of the first current; a second node to receive a second current; a second transistor including a first terminal, the first terminal of the second transistor connected to the second node and receiving a first branch current of the second current; a third resistive element connected to the second node and receiving a second branch current of the second current; wherein a temperature coefficient is adjusted by a resistance of the second resistive element and a resistance of the third resistive element and corresponding to the first current.
公开/授权文献
- US20200098823A1 CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY 公开/授权日:2020-03-26
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