Invention Grant
- Patent Title: Quantum dots
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Application No.: US16298276Application Date: 2019-03-11
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Publication No.: US10954441B2Publication Date: 2021-03-23
- Inventor: Tae Hyung Kim , Jeong Hee Lee , Sung Woo Kim , Jin A Kim , Yuho Won , Eun Joo Jang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Cantor Colburn LLP
- Priority: KR10-2018-0028319 20180309
- Main IPC: C09K11/88
- IPC: C09K11/88 ; H01L51/50 ; H05B33/14 ; C09K11/02 ; B82Y20/00 ; B82Y40/00

Abstract:
A quantum dot includes a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on (e.g., directly on) the core and including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, wherein a size of the quantum dot is greater than or equal to about 10 nanometers (nm) and the quantum dot includes at least four protrusions. A production method thereof and an electronic device including the same are also disclosed.
Public/Granted literature
- US20190276738A1 QUANTUM DOTS Public/Granted day:2019-09-12
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