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1.发明授权公开(公告)号：US12114518B2
公开(公告)日：2024-10-08
申请号：US17511706
申请日：2021-10-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo Kim , Chan Su Kim , Tae Ho Kim , Kun Su Park , Eun Joo Jang , Jin A Kim , Tae Hyung Kim , Jeong Hee Lee
CPC classification number: H10K50/11 , H10K30/10 , H10K50/115 , H10K50/15 , H10K50/16 , H10K85/649
Abstract: An electroluminescent device, a method of manufacturing the same, and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, the emission layer including light emitting particles; an electron transport layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the second electrode and the emission layer, wherein the electron transport layer includes inorganic oxide particles and a metal-organic compound, the metal-organic compound or a thermal decomposition product of the metal-organic compound being soluble a non-polar solvent.
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2.发明授权公开(公告)号：US12060511B2
公开(公告)日：2024-08-13
申请号：US17063821
申请日：2020-10-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho Won , Jeong Hee Lee , Eun Joo Jang , Ha Il Kwon , Sujin Park
IPC: C09K11/08 , C09K11/88 , H10K50/115 , B82Y20/00 , B82Y40/00
CPC classification number: C09K11/883 , C09K11/0883 , H10K50/115 , B82Y20/00 , B82Y40/00
Abstract: A quantum dot including a semiconductor nanocrystal core including indium (In) and phosphorus (P) and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the semiconductor nanocrystal shell including zinc (Zn) and selenium (Se), wherein the semiconductor nanocrystal shell is doped with a dopant metal having a larger ion radius than a radius of an Zn2+ ion, the quantum dot does not include cadmium, and the quantum dot has a quantum efficiency of greater than or equal to about 70% and a full width at half maximum (FWHM) of an emission peak of less than or equal to about 40 nanometers (nm), and an electroluminescent device including the same.
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公开(公告)号：US11661550B2
公开(公告)日：2023-05-30
申请号：US17543197
申请日：2021-12-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Jeong Hee Lee , Eun Joo Jang
CPC classification number: C09K11/883 , C09K11/565 , H01L51/502
Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.
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公开(公告)号：US11566345B2
公开(公告)日：2023-01-31
申请号：US16281232
申请日：2019-02-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin A Kim , Yuho Won , Sung Woo Kim , Tae Hyung Kim , Jeong Hee Lee , Eun Joo Jang
IPC: B32B5/16 , B05D7/00 , B82Y20/00 , C30B29/48 , C01G9/08 , H01L51/50 , H01L33/28 , C09K11/02 , C09K11/56 , C09K11/88 , H01L33/06 , B82Y40/00
Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.
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公开(公告)号：US11563143B2
公开(公告)日：2023-01-24
申请号：US16998262
申请日：2020-08-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Seok Han , Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Kun Su Park , Yuho Won , Jeong Hee Lee , Eun Joo Jang , Hyo Sook Jang
Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.
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Patent Agency Ranking
公开(公告)号：US10954440B2
公开(公告)日：2021-03-23
申请号：US16298108
申请日：2019-03-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho Won , Sung Woo Kim , Jin A Kim , Jeong Hee Lee , Tae Hyung Kim , Eun Joo Jang
Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.
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公开(公告)号：US09804323B2
公开(公告)日：2017-10-31
申请号：US14251881
申请日：2014-04-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Min Jong Bae , Jeong Hee Lee , Dong Earn Kim , Sang Eui Lee , Na Youn Won , Hyun A Kang , Shin Ae Jun
CPC classification number: G02B6/0096 , Y10T29/49826
Abstract: A light source unit includes a light guide plate which includes a front surface and a rear surface which are opposite to each other and a side between and connecting the front surface and the rear surface, a light conversion device on the side of the light guide plate; and a light source which generates and supplies light to the light conversion device. The light conversion device includes, a sealed tube, a light conversion member within the sealed tube and a space other than an area in the tube which is occupied by the light conversion member, defined in the tube.
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公开(公告)号：US11982018B2
公开(公告)日：2024-05-14
申请号：US18052597
申请日：2022-11-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin A Kim , Yuho Won , Sung Woo Kim , Tae Hyung Kim , Jeong Hee Lee , Eun Joo Jang
IPC: C30B29/40 , C01G9/08 , C09K11/02 , C09K11/56 , C09K11/88 , C30B29/48 , H01L33/06 , H01L33/28 , H10K50/115 , B82Y20/00 , B82Y40/00
CPC classification number: C30B29/48 , C01G9/08 , C09K11/02 , C09K11/565 , C09K11/883 , H01L33/06 , H01L33/28 , H10K50/115 , B82Y20/00 , B82Y40/00 , C01P2002/85 , C01P2004/04 , C01P2004/64
Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.
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公开(公告)号：US11925044B2
公开(公告)日：2024-03-05
申请号：US17944394
申请日：2022-09-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Ho Kim , Won Sik Yoon , Jeong Hee Lee , Eun Joo Jang , Oul Cho
IPC: H10K50/115 , H10K50/81 , H10K50/84 , H10K59/00 , H10K71/00 , H10K102/10
CPC classification number: H10K50/115 , H10K50/81 , H10K50/84 , H10K71/00 , H10K59/00 , H10K2102/103
Abstract: A light emitting device includes: a first electrode and a second electrode facing each other, an emissive layer disposed between the first electrode and the second electrode and including a quantum dot, an electron auxiliary layer disposed between the emissive layer and the second electrode and including a plurality of nanoparticles, and a polymer layer between a portion of the second electrode and the electron auxiliary layer, wherein the nanoparticles include a metal oxide including zinc, wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and the polymer layer is disposed on a portion of the second surface and a portion of the surface of the electron auxiliary layer, and wherein the polymer layer includes a polymerization product of a thiol compound and an unsaturated compound having at least two carbon-carbon unsaturated bonds.
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公开(公告)号：US11499098B2
公开(公告)日：2022-11-15
申请号：US17007179
申请日：2020-08-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Kun Su Park , Yuho Won , Jeong Hee Lee , Eun Joo Jang , Hyo Sook Jang , Yong Seok Han , Heejae Chung
Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
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