Invention Grant
- Patent Title: Integrated circuit devices including a boron-containing insulating pattern
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Application No.: US16358212Application Date: 2019-03-19
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Publication No.: US10957647B2Publication Date: 2021-03-23
- Inventor: Dong-kak Lee , Yoon-ho Son , Mong-sup Lee , Wook-yeol Yi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2018-0094613 20180813
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L27/108 ; H01L23/522 ; H01L21/762 ; H01L21/768
Abstract:
Integrated circuit (IC) devices are provided. An IC device includes a substrate including an active region. The IC device includes a bit line on the substrate. The IC device includes a direct contact connected between the active region and the bit line. The IC device includes a contact plug on the substrate. Moreover, the IC device includes a boron-containing insulating pattern between the contact plug and the direct contact.
Public/Granted literature
- US20200051921A1 INTEGRATED CIRCUIT DEVICES INCLUDING A BORON-CONTAINING INSULATING PATTERN Public/Granted day:2020-02-13
Information query
IPC分类:
