公开(公告)号：US10957647B2

公开(公告)日：2021-03-23

申请号：US16358212

申请日：2019-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-kak Lee ,  Yoon-ho Son ,  Mong-sup Lee ,  Wook-yeol Yi

IPC: H01L23/532 ,  H01L27/108 ,  H01L23/522 ,  H01L21/762 ,  H01L21/768

Abstract: Integrated circuit (IC) devices are provided. An IC device includes a substrate including an active region. The IC device includes a bit line on the substrate. The IC device includes a direct contact connected between the active region and the bit line. The IC device includes a contact plug on the substrate. Moreover, the IC device includes a boron-containing insulating pattern between the contact plug and the direct contact.

公开(公告)号：US20200051921A1

公开(公告)日：2020-02-13

申请号：US16358212

申请日：2019-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-kak Lee ,  Yoon-ho Son ,  Mong-sup Lee ,  Wook-yeol Yi

IPC: H01L23/532 ,  H01L27/108 ,  H01L21/768 ,  H01L21/762 ,  H01L23/522

Abstract: Integrated circuit (IC) devices are provided. An IC device includes a substrate including an active region. The IC device includes a bit line on the substrate. The IC device includes a direct contact connected between the active region and the bit line. The IC device includes a contact plug on the substrate. Moreover, the IC device includes a boron-containing insulating pattern between the contact plug and the direct contact.