公开(公告)号：US10297495B2

公开(公告)日：2019-05-21

申请号：US15943080

申请日：2018-04-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mong-sup Lee ,  Sang-jun Lee ,  Yoon-ho Son

IPC: H01L27/108 ,  H01L21/768 ,  H01L21/311 ,  H01L21/764 ,  H01L21/66

Abstract: A method of manufacturing a semiconductor device includes forming a first conductive structure on a substrate, forming an insulation layer on a sidewall of the first conductive structure, forming a second conductive structure a distance apart from the first conductive structure with the insulation layer therebetween, first removing a portion of the insulation layer by performing a first dry cleaning operation, second removing a reactant product used in the first dry cleaning operation or a first byproduct generated as a result of the first dry cleaning operation by performing a first purge operation, and third removing at least a portion of the remaining insulation layer by performing a second dry cleaning operation to form an air gap between the first and second conductive structures.

公开(公告)号：US10290537B2

公开(公告)日：2019-05-14

申请号：US15399247

申请日：2017-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mong-sup Lee ,  Sang-jun Lee ,  Yoon-ho Son

IPC: H01L21/311 ,  H01L21/764 ,  H01L21/768 ,  H01L27/108 ,  H01L21/66

Abstract: A method of manufacturing a semiconductor device includes forming a first conductive structure on a substrate, forming an insulation layer on a sidewall of the first conductive structure, forming a second conductive structure a distance apart from the first conductive structure with the insulation layer therebetween, first removing a portion of the insulation layer by performing a first dry cleaning operation, second removing a reactant product used in the first dry cleaning operation or a first byproduct generated as a result of the first dry cleaning operation by performing a first purge operation, and third removing at least a portion of the remaining insulation layer by performing a second dry cleaning operation to form an air gap between the first and second conductive structures.

公开(公告)号：US20200051921A1

公开(公告)日：2020-02-13

申请号：US16358212

申请日：2019-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-kak Lee ,  Yoon-ho Son ,  Mong-sup Lee ,  Wook-yeol Yi

IPC: H01L23/532 ,  H01L27/108 ,  H01L21/768 ,  H01L21/762 ,  H01L23/522

Abstract: Integrated circuit (IC) devices are provided. An IC device includes a substrate including an active region. The IC device includes a bit line on the substrate. The IC device includes a direct contact connected between the active region and the bit line. The IC device includes a contact plug on the substrate. Moreover, the IC device includes a boron-containing insulating pattern between the contact plug and the direct contact.

公开(公告)号：US10957647B2

公开(公告)日：2021-03-23

申请号：US16358212

申请日：2019-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-kak Lee ,  Yoon-ho Son ,  Mong-sup Lee ,  Wook-yeol Yi

IPC: H01L23/532 ,  H01L27/108 ,  H01L23/522 ,  H01L21/762 ,  H01L21/768

Abstract: Integrated circuit (IC) devices are provided. An IC device includes a substrate including an active region. The IC device includes a bit line on the substrate. The IC device includes a direct contact connected between the active region and the bit line. The IC device includes a contact plug on the substrate. Moreover, the IC device includes a boron-containing insulating pattern between the contact plug and the direct contact.

公开(公告)号：US09570316B2

公开(公告)日：2017-02-14

申请号：US14718293

申请日：2015-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mong-sup Lee ,  Sang-jun Lee ,  Yoon-ho Son

IPC: H01L21/311 ,  H01L21/764 ,  H01L21/768 ,  H01L27/108 ,  H01L21/66

CPC classification number: H01L21/7682 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/764 ,  H01L21/76895 ,  H01L21/76897 ,  H01L22/12 ,  H01L22/20 ,  H01L27/10855 ,  H01L27/10885

Abstract: A method of manufacturing a semiconductor device includes forming a first conductive structure on a substrate, forming an insulation layer on a sidewall of the first conductive structure, forming a second conductive structure a distance apart from the first conductive structure with the insulation layer therebetween, first removing a portion of the insulation layer by performing a first dry cleaning operation, second removing a reactant product used in the first dry cleaning operation or a first byproduct generated as a result of the first dry cleaning operation by performing a first purge operation, and third removing at least a portion of the remaining insulation layer by performing a second dry cleaning operation to form an air gap between the first and second conductive structures.

Abstract translation: 一种制造半导体器件的方法包括在衬底上形成第一导电结构，在第一导电结构的侧壁上形成绝缘层，形成距离第一导电结构一定距离的第二导电结构，其间具有绝缘层，第一导电结构 通过进行第一次干洗操作来除去绝缘层的一部分，第二次除去在第一次干洗操作中使用的反应物产物或通过进行第一次清洗操作而由第一次干洗操作产生的第一副产物，以及第三次 通过执行第二干式清洁操作来移除剩余绝缘层的至少一部分，以在第一和第二导电结构之间形成气隙。