- 专利标题： Memory cells with capacitive logic based on electromechanically controlled variable-capacitance capacitors
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申请号： US16567927申请日： 2019-09-11
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公开(公告)号： US10964373B2公开(公告)日： 2021-03-30
- 发明人: Yann Perrin , Hervé Fanet , Ayrat Galisultanov , Gaël Pillonnet
- 申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 申请人地址： FR Paris
- 专利权人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 当前专利权人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 当前专利权人地址： FR Paris
- 代理机构： Wolf, Greenfield & Sacks, P.C.
- 优先权： FR1858125 20180911
- 主分类号： G11C23/00
- IPC分类号： G11C23/00 ; G11C11/23 ; G11C11/24 ; G11C11/50 ; H01P7/08 ; H01G5/40
摘要：
A memory cell in capacitive logic, including a bistable system including a fixed element and a mobile element capable of taking one or the other of two stable positions with respect to the fixed element; a read device including a variable-capacitance capacitor including a first fixed electrode and a second mobile electrode rigidly fixed to the mobile element; and an electrically controllable write device for placing the mobile element in one or the other of its two stable positions.
公开/授权文献
- US20200082867A1 MEMORY CELL IN CAPACITIVE LOGIC 公开/授权日：2020-03-12
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