- 专利标题: Electrode for plasma processing chamber
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申请号: US15785983申请日: 2017-10-17
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公开(公告)号: US10964514B2公开(公告)日: 2021-03-30
- 发明人: Evan Edward Patton , John Daugherty
- 申请人: Lam Research Corporation
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: Penilla IP, APC
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H01L21/3065 ; H01L21/443 ; H05H1/46
摘要:
An electrode for transmitting radiofrequency power to a plasma processing region includes a plate formed of semiconducting material and a high electrical conductivity layer formed on a top surface of the plate and integral with the plate. The high electrical conductivity layer has a lower electrical resistance than the semiconducting material of the plate. The electrode includes a distribution of through-holes. Each through-hole extends through an entire thickness of the electrode from a top surface of the high electrical conductivity layer to a bottom surface of the plate. In some embodiments, the plate can be formed of a silicon material and the high electrical conductivity layer can be a silicide material formed from the silicon material of the plate.
公开/授权文献
- US20190115189A1 Electrode for Plasma Processing Chamber 公开/授权日:2019-04-18
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