公开(公告)号：US12064795B2

公开(公告)日：2024-08-20

申请号：US17211518

申请日：2021-03-24

申请人： Lam Research Corporation

发明人： Amir A. Yasseri ,  Hong Shih ,  John Daugherty ,  Duane Outka ,  Lin Xu ,  Armen Avoyan ,  Cliff La Croix ,  Girish Hundi

IPC分类号： B08B7/04 ,  B08B3/04 ,  B08B3/12 ,  B08B3/14 ,  B08B5/02 ,  H01J37/32

CPC分类号： B08B7/04 ,  B08B3/048 ,  B08B3/12 ,  B08B3/14 ,  B08B5/02 ,  H01J37/32853

摘要： A method for conditioning a component of a wafer processing chamber is provided. The component is placed in an ultrasonic conditioning solution in an ultrasonic solution tank. Ultrasonic energy is applied through the ultrasonic conditioning solution to the component to clean the component. The component is submerged in a megasonic conditioning solution in a tank. Megasonic energy is applied through the megasonic conditioning solution to the component to clean the component.

公开(公告)号：US10964514B2

公开(公告)日：2021-03-30

申请号：US15785983

申请日：2017-10-17

申请人： Lam Research Corporation

发明人： Evan Edward Patton ,  John Daugherty

IPC分类号： H01J37/32 ,  H01L21/3065 ,  H01L21/443 ,  H05H1/46

摘要： An electrode for transmitting radiofrequency power to a plasma processing region includes a plate formed of semiconducting material and a high electrical conductivity layer formed on a top surface of the plate and integral with the plate. The high electrical conductivity layer has a lower electrical resistance than the semiconducting material of the plate. The electrode includes a distribution of through-holes. Each through-hole extends through an entire thickness of the electrode from a top surface of the high electrical conductivity layer to a bottom surface of the plate. In some embodiments, the plate can be formed of a silicon material and the high electrical conductivity layer can be a silicide material formed from the silicon material of the plate.

公开(公告)号：US10790174B2

公开(公告)日：2020-09-29

申请号：US15951333

申请日：2018-04-12

申请人： LAM RESEARCH CORPORATION

发明人： John Daugherty ,  David Trussell ,  Michael Kellogg ,  Christopher Pena ,  Richard H. Gould ,  Klay Kunkel

IPC分类号： H01L21/67

摘要： A wafer transport assembly includes a first wafer transport module and a second wafer transport module. A buffer module, arranged between the first wafer transport module and the second wafer transport module, includes a first buffer stack and a second buffer stack. Outer sides of the first wafer transport module are coupled to first and second process modules, respectively, and outer sides of the second wafer transport module are coupled to third and fourth process modules, respectively. The first wafer transport module, the second wafer transport module, and the buffer module define a continuous wafer transport volume providing a controlled environment within the wafer transport assembly.

公开(公告)号：US09873940B2

公开(公告)日：2018-01-23

申请号：US14572087

申请日：2014-12-16

申请人： Lam Research Corporation

发明人： Lin Xu ,  Hong Shih ,  Nash Anderson ,  Tom Stevenson ,  John Daugherty ,  John Michael Kerns ,  Robert Griffith O'Neill

IPC分类号： C23C16/455 ,  C23C14/56 ,  C23C16/04 ,  C23C16/44

CPC分类号： C23C14/564 ,  C23C16/045 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45525 ,  Y10T29/41 ,  Y10T428/263 ,  Y10T428/31504 ,  Y10T428/31551 ,  Y10T428/31678 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31786

摘要： A coating system for forming an atomic layer deposition (ALD) or a molecular layer deposition (MLD) barrier coating on interior fluid wetted surfaces of a fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus. The coating system includes the fluid handling component, wherein the interior fluid wetted surfaces define a process region of the coating system, a gas supply system in fluid communication with the process region of the component wherein the gas supply system supplies process gases to the process region of the component through the inlet port thereof such that an ALD or MLD barrier coating can be formed on the fluid wetted surfaces of the fluid handling component, and an exhaust system in fluid communication with the process region of the component wherein the exhaust system exhausts the process gases from the process region of the component through the outlet port thereof.

公开(公告)号：US20170115657A1

公开(公告)日：2017-04-27

申请号：US14920090

申请日：2015-10-22

申请人： Lam Research Corporation

发明人： David D. Trussell ,  Alan J. Miller ,  John Daugherty ,  Alex Paterson

IPC分类号： G05B19/418

CPC分类号： G05B19/418 ,  G05B19/41875 ,  G05B2219/32212 ,  G05B2219/45031 ,  G05B2219/50291 ,  H01L21/67167 ,  H01L21/6719 ,  Y02P90/22

摘要： A cluster tool assembly includes a vacuum transfer module, a process module having a first side connected to the vacuum transfer module. An isolation valve having a first side and a second side, the first side of the isolation valve coupled to a second side of the process module. A replacement station is coupled to the second side of the isolation valve. The replacement station includes an exchange handler and a part buffer. The part buffer includes a plurality of compartments to hold new or used consumable parts. The process module includes a lift mechanism to enable placement of a consumable part installed in the process module to a raised position. The raised position provides access to the exchange handler to enable removal of the consumable part from the process module and store in a compartment of the part buffer. The exchange handler of the replacement station is configured to provide a replacement for the consumable part from the part buffer back to the process module. The lift mechanism is configured to receive the consumable part provided for replacement by the exchange handler and lower the consumable part to an installed position. The replacement by the exchange handler and the process module is conducted while the process module and the replacement station are maintained in a vacuum state.

公开(公告)号：US20170110354A1

公开(公告)日：2017-04-20

申请号：US14887935

申请日：2015-10-20

申请人： Lam Research Corporation

发明人： John Daugherty ,  David Trussell ,  Michael Kellogg ,  Christopher Pena ,  Richard Gould ,  Klay Kunkel

IPC分类号： H01L21/677 ,  H01L21/67 ,  H01L21/673

CPC分类号： H01L21/67196 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67727 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67754 ,  H01L21/67769

摘要： A wafer transport assembly includes first and second wafer transport modules, and a buffer module coupled between the first and second wafer transport modules. The first and second wafer transport modules and the buffer module are aligned in a single directional axis. The buffer module includes a first buffer stack positioned at a first lateral end of the buffer module, and a second buffer stack positioned at a second lateral end of the buffer module. The first lateral end of the buffer module defines a first side protrusion nested between the first and second wafer transport modules and first and second process modules. The second lateral end of the buffer module defines a second side protrusion that is nested between the first and second wafer transport modules and third and fourth process modules. The first and second wafer transport modules and the buffer module define a continuous controlled environment.

公开(公告)号：US09502275B1

公开(公告)日：2016-11-22

申请号：US14887876

申请日：2015-10-20

申请人： Lam Research Corporation

发明人： David Trussell ,  John Daugherty ,  Michael Kellogg ,  Christopher Pena ,  Richard Gould ,  Klay Kunkel

IPC分类号： H01L21/67 ,  H01L21/677

CPC分类号： H01L21/67173 ,  H01L21/67155 ,  H01L21/67167 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/67706 ,  H01L21/67727 ,  H01L21/67733 ,  H01L21/67745

摘要： A system for processing substrates is provided, comprising: a wafer transport assembly that is configured to transport wafers to and from one or more process modules, the wafer transport assembly having at least one wafer transport module, wherein lateral sides of the at least one wafer transport module are configured to couple to the one or more process modules; a service floor defined below the wafer transport assembly, the service floor being defined at a height that is less than a height of a fabrication facility floor in which the system is disposed.

摘要翻译： 提供了一种用于处理衬底的系统，包括：晶片传送组件，其被配置为将晶片传送到一个或多个过程模块并从一个或多个过程模块传送晶片传输组件，所述晶片传输组件具有至少一个晶片传送模块，其中所述至少一个晶片的侧面 传输模块被配置为耦合到所述一个或多个处理模块; 在晶片运输组件下面定义的服务楼层，服务楼层被限定在小于系统设置在其中的制造设施楼层的高度的高度。

公开(公告)号：US09123651B2

公开(公告)日：2015-09-01

申请号：US13851605

申请日：2013-03-27

申请人： Lam Research Corporation

发明人： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  William Charles ,  John Daugherty ,  Sivakami Ramanathan ,  Russell Ormond ,  Robert G. O'Neill ,  Tom Stevenson

IPC分类号： H01L21/3065 ,  H01L21/02 ,  C25D11/02 ,  C23C16/44

CPC分类号： C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

摘要： A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

摘要翻译： 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。

公开(公告)号：US12129569B2

公开(公告)日：2024-10-29

申请号：US17795509

申请日：2021-02-16

申请人： Lam Research Corporation

发明人： Lin Xu ,  David Joseph Wetzel ,  John Daugherty ,  Hong Shih ,  Satish Srinivasan ,  Yuanping Song ,  Johnny Pham ,  Yiwei Song ,  Christopher Kimball

IPC分类号： C25D7/04 ,  C25D3/44 ,  C25D5/48 ,  C25D11/08 ,  H01J37/32 ,  H01L21/683

CPC分类号： C25D7/04 ,  C25D3/44 ,  C25D5/48 ,  C25D11/08 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/334 ,  Y10T428/12542 ,  Y10T428/12576 ,  Y10T428/12583 ,  Y10T428/12667 ,  Y10T428/12806

摘要： A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10−6/K. A metal oxide layer is then disposed over a surface of the component body.

公开(公告)号：US11764086B2

公开(公告)日：2023-09-19

申请号：US17860736

申请日：2022-07-08

申请人： LAM RESEARCH CORPORATION

发明人： David Trussell ,  John Daugherty ,  Christopher J. Pena ,  Michael C. Kellogg ,  Klay Kunkel ,  Richard H. Gould

IPC分类号： H01L21/67

CPC分类号： H01L21/67196 ,  H01L21/6719 ,  H01L21/67161

摘要： A substrate processing system configured to process substrates includes a substrate transport assembly that encloses a controlled environment defined within a continuous transport volume and at least two process modules coupled to the substrate transport assembly. The substrate transport assembly is configured to transport substrates to and from the at least two process modules through the continuous transport volume. At least two gas boxes are configured to deliver gas mixtures to the at least two process modules. An exhaust duct configured to selectively evacuate the at least two process modules through the at least two gas boxes. Surfaces of the at least two gas boxes include perforations configured to allow gases to flow from the at least two gas boxes into the exhaust duct.