Invention Grant
- Patent Title: Drying high aspect ratio features
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Application No.: US15650140Application Date: 2017-07-14
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Publication No.: US10971354B2Publication Date: 2021-04-06
- Inventor: Eric J. Bergman , John L. Klocke , Paul McHugh , Stuart Crane , Richard W. Plavidal
- Applicant: Applied Materials Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials Inc.
- Current Assignee: Applied Materials Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: C30B33/00
- IPC: C30B33/00 ; H01L21/02 ; F26B21/14 ; B08B7/00 ; F26B5/00

Abstract:
Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.
Public/Granted literature
- US20180019119A1 DRYING HIGH ASPECT RATIO FEATURES Public/Granted day:2018-01-18
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