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公开(公告)号：US20170263472A1
公开(公告)日：2017-09-14
申请号：US15441081
申请日：2017-02-23
CPC分类号： H01L21/67057 , B08B3/10 , B08B3/12 , H01L21/67028 , H01L21/67051 , H01L21/6719 , H01L21/68707 , H01L21/68764 , H01L21/68771 , H01L21/68785 , H01L21/68792
摘要： A wafer processor has a rotor holding wafers within a process tank. The rotor rotates sequentially moving the wafers through a process liquid held in the process tank. The tank may have an I-beam shape to reduce the volume of process liquid. A load port is provided at a top of the process tank for loading and unloading wafers into and out of the process tank. Rinsing and cleaning chambers may be associated with the load port to remove process liquid from processed wafers. The processor may be oriented with the rotor rotating about a horizontal axis or about a vertical axis.
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公开(公告)号：US10191379B2
公开(公告)日：2019-01-29
申请号：US15606883
申请日：2017-05-26
发明人： Paul R. McHugh , Kyle Moran Hanson , John L. Klocke , Eric J. Bergman , Stuart Crane , Gregory J. Wilson
摘要： In systems and methods for removing a photoresist film off of a wafer, the wafer is moved into a bath of a process liquid in a process tank. The process liquid removes the photoresist film from the wafer. The process liquid is pumped from the process tank to a filter assembly and moved through filter media to filter out solids from the process liquid, and the filtered process liquid is returned to the process tank. A scraper scrapes the filter media to prevent clogging of the filter media by accumulated solids.
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公开(公告)号：US20180019119A1
公开(公告)日：2018-01-18
申请号：US15650140
申请日：2017-07-14
CPC分类号： H01L21/02101 , B08B7/0021 , B08B7/0035 , F26B5/005 , F26B21/145 , H01L21/02046 , H01L21/02054 , H01L21/02057 , H01L21/02082 , H01L21/02096 , H01L21/02661
摘要： Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.
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公开(公告)号：US20170357158A1
公开(公告)日：2017-12-14
申请号：US15606883
申请日：2017-05-26
发明人： Paul R. McHugh , Kyle Moran Hanson , John L. Klocke , Eric J. Bergman , Stuart Crane , Gregory J. Wilson
IPC分类号： G03F7/42
CPC分类号： G03F7/422 , G03F7/3092 , G03F7/40 , H01L21/02087
摘要： In systems and methods for removing a photoresist film off of a wafer, the wafer is moved into a bath of a process liquid in a process tank. The process liquid removes the photoresist film from the wafer. The process liquid is pumped from the process tank to a filter assembly and moved through filter media to filter out solids from the process liquid, and the filtered process liquid is returned to the process tank. A scraper scrapes the filter media to prevent clogging of the filter media by accumulated solids.
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公开(公告)号：US11371159B2
公开(公告)日：2022-06-28
申请号：US16449358
申请日：2019-06-22
摘要： Methods and apparatus for reducing the formation of insoluble deposits in semiconductor electrochemical plating equipment or a surface thereof during electrochemical plating, including: removing electrochemical plating equipment or a surface thereof from an electroplating solution, wherein residual electroplating solution is disposed atop the electrochemical plating equipment or a surface thereof, and wherein the residual electroplating solution has a first pH; contacting the residual electroplating solution with a rinse agent having a second pH similar to the first pH to form a rinsate; and removing the rinsate from the electrochemical plating equipment or a surface thereof.
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公开(公告)号：US10546762B2
公开(公告)日：2020-01-28
申请号：US15814252
申请日：2017-11-15
摘要： Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.
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公开(公告)号：US20180144954A1
公开(公告)日：2018-05-24
申请号：US15814252
申请日：2017-11-15
摘要： Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.
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公开(公告)号：US11697888B2
公开(公告)日：2023-07-11
申请号：US17750733
申请日：2022-05-23
摘要： Methods and apparatus for reducing the formation of insoluble deposits in semiconductor electrochemical plating equipment or a surface thereof during electrochemical plating, including: removing electrochemical plating equipment or a surface thereof from an electroplating solution, wherein residual electroplating solution is disposed atop the electrochemical plating equipment or a surface thereof, and wherein the residual electroplating solution has a first pH; contacting the residual electroplating solution with a rinse agent having a second pH similar to the first pH to form a rinsate; and removing the rinsate from the electrochemical plating equipment or a surface thereof.
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公开(公告)号：US20220282394A1
公开(公告)日：2022-09-08
申请号：US17750733
申请日：2022-05-23
摘要： Methods and apparatus for reducing the formation of insoluble deposits in semiconductor electrochemical plating equipment or a surface thereof during electrochemical plating, including: removing electrochemical plating equipment or a surface thereof from an electroplating solution, wherein residual electroplating solution is disposed atop the electrochemical plating equipment or a surface thereof, and wherein the residual electroplating solution has a first pH; contacting the residual electroplating solution with a rinse agent having a second pH similar to the first pH to form a rinsate; and removing the rinsate from the electrochemical plating equipment or a surface thereof.
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公开(公告)号：US10971354B2
公开(公告)日：2021-04-06
申请号：US15650140
申请日：2017-07-14
摘要： Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.
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