公开(公告)号：US11814744B2

公开(公告)日：2023-11-14

申请号：US16370265

申请日：2019-03-29

Applicant: Applied Materials, Inc.

Inventor： Nolan Zimmerman ,  Gregory J. Wilson ,  Andrew Anten ,  Richard W. Plavidal ,  Eric J. Bergman ,  Tricia Youngbull ,  Timothy Gale Stolt ,  Sam Lee

IPC: C25D21/08 ,  C25D5/48 ,  H01L21/02 ,  C25D7/12 ,  C25D17/00 ,  H01L21/288

CPC classification number: C25D21/08 ,  C25D5/48 ,  C25D7/12 ,  C25D17/001 ,  H01L21/02068 ,  H01L21/2885

Abstract: Systems for cleaning electroplating system components may include an electroplating apparatus including a plating bath vessel. The electroplating apparatus may include a rinsing frame extending above the plating bath vessel. The rinsing frame may include a rim extending circumferentially about an upper surface of the plating bath vessel and defining a rinsing channel between the rim and the upper surface of the plating bath vessel. The electroplating apparatus may also include a rinsing assembly including a splash guard that is translatable from a recessed first position to a second position extending at least partially across an access to the plating bath vessel. The rinsing assembly may also include a fluid nozzle extending from the rinsing frame.

公开(公告)号：US20230077737A1

公开(公告)日：2023-03-16

申请号：US17474394

申请日：2021-09-14

Applicant: Applied Materials, Inc.

Inventor： Eric J. Bergman ,  John L. Klocke ,  Marvin L. Bernt ,  Prayudi Lianto

IPC: H01L21/768 ,  H01L21/288 ,  H01L23/532

Abstract: Exemplary methods of plating are described. The methods may include contacting a patterned substrate with a plating bath in a plating chamber. The patterned substrate includes at least one metal interconnect with a contact surface that is exposed to the plating bath. The metal interconnect is made of a first metal characterized by a first reduction potential. The methods further include plating a diffusion layer on the contact surface of the metal interconnect. The diffusion layer is made of a second metal characterized by a second reduction potential that is larger than the first reduction potential of the first metal in the metal interconnects. The plating bath also includes one or more ions of the second metal and a grain refining compound that reduces the formation of pinhole defects in the diffusion layer.

公开(公告)号：US11578422B2

公开(公告)日：2023-02-14

申请号：US17583004

申请日：2022-01-24

Applicant: APPLIED Materials, Inc.

Inventor： Paul R. McHugh ,  Gregory J. Wilson ,  Kyle M. Hanson ,  John L. Klocke ,  Paul Van Valkenburg ,  Eric J. Bergman ,  Adam Marc McClure ,  Deepak Saagar Kalaikadal ,  Nolan Layne Zimmerman ,  Michael Windham ,  Mikael R. Borjesson

IPC: C25D17/12 ,  C25D21/12 ,  C25D5/08 ,  C25D7/12 ,  C25D17/00

Abstract: An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

公开(公告)号：US11352711B2

公开(公告)日：2022-06-07

申请号：US16513434

申请日：2019-07-16

Applicant: Applied Materials, Inc.

Inventor： Sam Lee ,  Kyle M. Hanson ,  Eric J. Bergman

IPC: C25D21/08 ,  H01L21/02 ,  H01L21/67 ,  C25D17/00

Abstract: Cleaning substrates or electroplating system components may include methods of rinsing a substrate at a semiconductor plating chamber. The methods may include moving a head from a plating bath to a first position. The head may include a substrate coupled with the head. The methods may include rotating the head for a first period of time to sling bath fluid back into the plating bath. A residual amount of bath fluid may remain. The methods may include delivering a first fluid to the substrate from a first fluid nozzle to at least partially expel the residual amount of bath fluid back into the plating bath. The methods may include moving the head to a second position. The methods may include rotating the head for a second period of time. The methods may also include delivering a second fluid across the substrate from a second fluid nozzle.

公开(公告)号：US11211252B2

公开(公告)日：2021-12-28

申请号：US16260611

申请日：2019-01-29

Applicant: Applied Materials, Inc.

Inventor： Eric J. Bergman ,  John L. Klocke ,  You Wang

IPC: C25D3/38 ,  C25D7/12 ,  C25D21/14 ,  H01L21/288 ,  C25D5/10 ,  H01L21/768

Abstract: Electroplating systems according to the present technology may include a two-bath electroplating chamber including a separator configured to provide fluid separation between a first bath configured to maintain a catholyte during operation and a second bath configured to maintain an anolyte during operation. The electroplating systems may include a catholyte tank and an anolyte tank fluidly coupled with the two baths of the two-bath electroplating chamber. The electroplating systems may include a first pump configured to provide catholyte from the catholyte tank to the first bath. The electroplating systems may include a second pump configured to provide anolyte from the anolyte tank to the second bath. The electroplating systems may also include an oxygen-delivery apparatus configured to provide an oxygen-containing fluid within the electroplating system.

公开(公告)号：US11629423B2

公开(公告)日：2023-04-18

申请号：US17411345

申请日：2021-08-25

Applicant: Applied Materials, Inc.

Inventor： Eric J. Bergman ,  Robert Mikkola

IPC: C25D3/50 ,  C25D5/02 ,  H01L21/768 ,  C25D5/54 ,  H01L21/288 ,  C23C14/18 ,  H01L21/28 ,  C23C16/455

Abstract: Exemplary methods of electroplating may include providing a patterned substrate having at least one opening, where the opening includes one or more sidewalls and a bottom surface. The methods may also include plating a first portion of ruthenium-containing material on the bottom surface of the opening at a first deposition rate and a second portion of ruthenium-containing material on the sidewalls of the opening at a second deposition rate, where the first deposition rate is greater than the second deposition rate. The methods may be used to make integrated circuit devices that include void-free, electrically-conductive lines and columns of ruthenium-containing materials.

公开(公告)号：US20210017665A1

公开(公告)日：2021-01-21

申请号：US16513434

申请日：2019-07-16

Applicant: Applied Materials, Inc.

Inventor： Sam Lee ,  Kyle M. Hanson ,  Eric J. Bergman

IPC: C25D21/08 ,  C25D17/00 ,  H01L21/67 ,  H01L21/02

Abstract: Cleaning substrates or electroplating system components may include methods of rinsing a substrate at a semiconductor plating chamber. The methods may include moving a head from a plating bath to a first position. The head may include a substrate coupled with the head. The methods may include rotating the head for a first period of time to sling bath fluid back into the plating bath. A residual amount of bath fluid may remain. The methods may include delivering a first fluid to the substrate from a first fluid nozzle to at least partially expel the residual amount of bath fluid back into the plating bath. The methods may include moving the head to a second position. The methods may include rotating the head for a second period of time. The methods may also include delivering a second fluid across the substrate from a second fluid nozzle.

公开(公告)号：US10546762B2

公开(公告)日：2020-01-28

申请号：US15814252

申请日：2017-11-15

Applicant: Applied Materials, Inc.

Inventor： Eric J. Bergman ,  John L. Klocke ,  Paul McHugh ,  Stuart Crane ,  Richard W. Plavidal

IPC: H01L21/67 ,  C11D7/26 ,  H01L21/02 ,  B08B3/04

Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.

公开(公告)号：US20190237335A1

公开(公告)日：2019-08-01

申请号：US16260611

申请日：2019-01-29

Applicant: Applied Materials, Inc.

Inventor： Eric J. Bergman ,  John L. Klocke ,  You Wang

IPC: H01L21/288 ,  C25D5/10 ,  C25D7/12 ,  H01L21/768 ,  C25D3/38

CPC classification number: H01L21/2885 ,  C25D3/38 ,  C25D5/10 ,  C25D7/123 ,  H01L21/76843

Abstract: Electroplating systems according to the present technology may include a two-bath electroplating chamber including a separator configured to provide fluid separation between a first bath configured to maintain a catholyte during operation and a second bath configured to maintain an anolyte during operation. The electroplating systems may include a catholyte tank and an anolyte tank fluidly coupled with the two baths of the two-bath electroplating chamber. The electroplating systems may include a first pump configured to provide catholyte from the catholyte tank to the first bath. The electroplating systems may include a second pump configured to provide anolyte from the anolyte tank to the second bath. The electroplating systems may also include an oxygen-delivery apparatus configured to provide an oxygen-containing fluid within the electroplating system.

公开(公告)号：US20180144954A1

公开(公告)日：2018-05-24

申请号：US15814252

申请日：2017-11-15

Applicant: Applied Materials, Inc.

Inventor： Eric J. Bergman ,  John L. Klocke ,  Paul McHugh ,  Stuart Crane ,  Richard W. Plavidal

IPC: H01L21/67 ,  C11D7/26 ,  H01L21/02

Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.