Invention Grant
- Patent Title: Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure
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Application No.: US16215899Application Date: 2018-12-11
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Publication No.: US10971451B2Publication Date: 2021-04-06
- Inventor: Kyung-Eun Byun , Keunwook Shin , Yonghoon Kim , Hyeonjin Shin , Hyunjae Song , Changseok Lee , Changhyun Kim , Yeonchoo Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2018-0086013 20180724
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768 ; H01L23/522

Abstract:
Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.
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