公开(公告)号：US12217958B2

公开(公告)日：2025-02-04

申请号：US16807702

申请日：2020-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook Shin ,  Janghee Lee ,  Seunggeol Nam ,  Hyeonjin Shin ,  Hyunseok Lim ,  Alum Jung ,  Kyung-Eun Byun ,  Jeonil Lee ,  Yeonchoo Cho

IPC: C23C16/02 ,  C23C16/26 ,  H01L21/02

Abstract: A method of pre-treating a substrate on which graphene will be directly formed may include pre-treating the substrate using a pre-treatment gas including at least a carbon source and hydrogen.

公开(公告)号：US12080595B2

公开(公告)日：2024-09-03

申请号：US17411467

申请日：2021-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook Shin ,  Sanghoon Ahn ,  Woojin Lee ,  Kyung-Eun Byun ,  Junghoo Shin ,  Hyeonjin Shin ,  Yunseong Lee

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/7685 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/28562

Abstract: Provided is a method of forming an interconnect structure. The method includes preparing a substrate including a first metal layer and a first insulating layer, selectively forming a carbon layer having an sp2 bonding structure on the first metal layer, selectively forming a second insulating layer on the first insulating layer, forming a third insulating layer to cover the second insulating layer, and forming a second metal layer electrically connected to the first metal layer.

公开(公告)号：US11975971B2

公开(公告)日：2024-05-07

申请号：US17190852

申请日：2021-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon Kim ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Eunkyu Lee ,  Changseok Lee

IPC: B32B9/00 ,  C01B32/186 ,  B82Y30/00

CPC classification number: C01B32/186 ,  B82Y30/00 ,  Y10T428/30

Abstract: A graphene manufacturing apparatus includes a reaction chamber a substrate supporter configured to structurally support a substrate inside the reaction chamber; a plasma generator configured to generate a plasma inside the reaction chamber; a first gas supply configured to supply an inert gas into the reaction chamber at a first height from an upper surface of the substrate supporter in a height direction of the reaction chamber; a second gas supply configured to supply a carbon source into the reaction chamber at a second height from the upper surface of the substrate supporter in the height direction of the reaction chamber; and a third gas supply configured to supply a reducing gas into the reaction chamber, wherein the first to third gas supply units are disposed at different heights at a third height from the upper surface of the substrate supporter in the height direction of the reaction chamber.

公开(公告)号：US11538810B2

公开(公告)日：2022-12-27

申请号：US17225601

申请日：2021-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunseok Lim ,  Minhyuk Cho ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Kaoru Yamamoto ,  Jungsoo Yoon ,  Soyoung Lee ,  Geuno Jeong

IPC: H01L27/108

Abstract: A wiring structure includes a first conductive pattern including doped polysilicon on a substrate, an ohmic contact pattern including a metal silicide on the first conductive pattern, an oxidation prevention pattern including a metal silicon nitride on the ohmic contact pattern, a diffusion barrier including graphene on the oxidation prevention pattern, and a second conductive pattern including a metal on the diffusion barrier.

公开(公告)号：US10850985B2

公开(公告)日：2020-12-01

申请号：US16233513

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alum Jung ,  Keunwook Shin ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Hyunseok Lim ,  Seunggeol Nam ,  Hyunjae Song ,  Yeonchoo Cho

IPC: H01L29/12 ,  C01B32/186 ,  C23C16/26 ,  C23C16/505 ,  C23C16/511 ,  H01L21/02 ,  H01L29/16 ,  H01L29/06 ,  H01L29/04

Abstract: A method of forming nanocrystalline graphene by a plasma-enhanced chemical vapor deposition process is provided. The method of forming nanocrystalline graphene includes arranging a protective layer on a substrate and growing nanocrystalline graphene directly on the protective layer by using a plasma of a reaction gas. The reaction gas may include a mixed gas of a carbon source gas, an inert gas, and hydrogen gas.

公开(公告)号：US10014799B2

公开(公告)日：2018-07-03

申请号：US14843020

申请日：2015-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Byun ,  Minsu Seol ,  Hyeonjin Shin ,  Seongjun Park

IPC: H02N1/04

CPC classification number: H02N1/04

Abstract: Example embodiments relate to triboelectric generators that include a first electrode and a triboelectric material layer facing first electrode, and a self-assembled monolayer that is combined with a surface of the first electrode or a surface of the triboelectric material layer between the first electrode and the triboelectric material layer. The self-assembled monolayer is formed of or include a material that includes a silane group, a silanol group, or a thiol group according to a material to be combined.

公开(公告)号：US12183783B2

公开(公告)日：2024-12-31

申请号：US17882169

申请日：2022-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alum Jung ,  Kyung-Eun Byun ,  Keunwook Shin

IPC: H01L29/06 ,  H01L21/02

Abstract: A stacked structure may include a first material layer, a two-dimensional material layer on the first material layer, and a second material layer on the two-dimensional material layer. The two-dimensional material layer may include a plurality of holes that each expose a portion of the first material layer. The second material layer may be coupled to the first material layer through the plurality of holes.

公开(公告)号：US11887849B2

公开(公告)日：2024-01-30

申请号：US17012661

申请日：2020-09-04

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Changhyun Kim ,  Sangwoo Kim ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Ahrum Sohn ,  Jaehwan Jung

IPC: H01L21/02 ,  C23C14/34 ,  C23C14/58 ,  C23C14/06 ,  H01L29/66

CPC classification number: H01L21/02631 ,  C23C14/06 ,  C23C14/34 ,  C23C14/5806 ,  H01L21/02667 ,  H01L29/66969 ,  H01L21/02568 ,  H01L21/02592 ,  H01L21/02595

Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: depositing a transition metal dichalcogenide thin film on a substrate; and heat-treating the deposited transition metal dichalcogenide thin film.

公开(公告)号：US11713248B2

公开(公告)日：2023-08-01

申请号：US17138194

申请日：2020-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok Lee ,  Changhyun Kim ,  Kyung-Eun Byun ,  Keunwook Shin ,  Hyeonjin Shin ,  Eunkyu Lee

IPC: C23C16/26 ,  C01B32/186 ,  C01B32/194 ,  C23C16/513 ,  C23C16/04 ,  C23C16/02

CPC classification number: C01B32/186 ,  C01B32/194 ,  C23C16/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/513

Abstract: A method of selectively growing graphene includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.

公开(公告)号：US11626502B2

公开(公告)日：2023-04-11

申请号：US17398363

申请日：2021-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Sangwon Kim ,  Kyung-Eun Byun ,  Hyunjae Song ,  Keunwook Shin ,  Eunkyu Lee ,  Changseok Lee ,  Yeonchoo Cho ,  Taejin Choi

IPC: H01L29/45 ,  H01L29/40 ,  H01L29/15 ,  H01L27/108

Abstract: An interconnect structure for reducing a contact resistance, an electronic device including the same, and a method of manufacturing the interconnect structure are provided. The interconnect structure includes a semiconductor layer including a first region having a doping concentration greater than a doping concentration of a peripheral region of the semiconductor layer, a metal layer facing the semiconductor layer, a graphene layer between the semiconductor layer and the metal layer, and a conductive metal oxide layer between the graphene layer and the semiconductor and covering the first region.