Invention Grant
- Patent Title: Semiconductor packaging with high density interconnects
-
Application No.: US16335845Application Date: 2016-09-30
-
Publication No.: US10971453B2Publication Date: 2021-04-06
- Inventor: Adel A. Elsherbini , Johanna M. Swan , Shawna M. Liff , Henning Braunisch , Krishna Bharath , Javier Soto Gonzalez , Javier A. Falcon
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman Lundberg & Woessner, P.A.
- International Application: PCT/US2016/054856 WO 20160930
- International Announcement: WO2018/063351 WO 20180405
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L25/065 ; H01L25/03 ; H01L23/498 ; H01L25/18 ; H01L21/48 ; H01L23/00 ; H01L25/00

Abstract:
Various embodiments disclosed relate to a semiconductor package. The present semiconductor package includes a substrate. The substrate is formed from alternating conducting layers and dielectric layers. A first active electronic component is disposed on an external surface of the substrate, and a second active electronic component is at least partially embedded within the substrate. A first interconnect region is formed from a plurality of interconnects between the first active electronic component and the second active electronic component. Between the first active electronic component and the substrate a second interconnect region is formed from a plurality of interconnects. Additionally, a third interconnect region is formed from a plurality of interconnects between the second active electronic component and the substrate.
Public/Granted literature
- US20190259705A1 SEMICONDUCTOR PACKAGING WITH HIGH DENSITY INTERCONNECTS Public/Granted day:2019-08-22
Information query
IPC分类: