A pixel architecture comprises: an absorption layer, which is configured to generate charges in response to incident light; a semiconductor charge-transport layer, which is configured to transport the generated charges through the charge-transport layer, wherein one or more doped regions are arranged in the charge-transport layer, wherein the charge-transport layer comprises a bias region and a charge-dispatch region being associated with the bias region; an electric connection connecting to and providing a selectable bias voltage to the bias region; and at least one transfer gate, wherein the doped regions and the bias region are differently biased for driving transport of the generated charges towards the charge-dispatch region, and for controlling, together with the at least one transfer gate, transfer of charges from the charge-dispatch region to a charge node.