公开(公告)号：US10972688B2

公开(公告)日：2021-04-06

申请号：US16511799

申请日：2019-07-15

Applicant: IMEC VZW

Inventor： Maarten Rosmeulen ,  Andreas Suss

IPC: H04N5/357 ,  H01L27/146 ,  H04N5/378

Abstract: A pixel architecture comprises: an absorption layer, which is configured to generate charges in response to incident light; a semiconductor charge-transport layer, which is configured to transport the generated charges through the charge-transport layer, wherein one or more doped regions are arranged in the charge-transport layer, wherein the charge-transport layer comprises a bias region and a charge-dispatch region being associated with the bias region; an electric connection connecting to and providing a selectable bias voltage to the bias region; and at least one transfer gate, wherein the doped regions and the bias region are differently biased for driving transport of the generated charges towards the charge-dispatch region, and for controlling, together with the at least one transfer gate, transfer of charges from the charge-dispatch region to a charge node.

公开(公告)号：US20200021758A1

公开(公告)日：2020-01-16

申请号：US16511799

申请日：2019-07-15

Applicant: IMEC VZW

Inventor： Maarten Rosmeulen ,  Andreas Suss

IPC: H04N5/357 ,  H01L27/146

Abstract: A pixel architecture comprises: an absorption layer, which is configured to generate charges in response to incident light; a semiconductor charge-transport layer, which is configured to transport the generated charges through the charge-transport layer, wherein one or more doped regions are arranged in the charge-transport layer, wherein the charge-transport layer comprises a bias region and a charge-dispatch region being associated with the bias region; an electric connection connecting to and providing a selectable bias voltage to the bias region; and at least one transfer gate, wherein the doped regions and the bias region are differently biased for driving transport of the generated charges towards the charge-dispatch region, and for controlling, together with the at least one transfer gate, transfer of charges from the charge-dispatch region to a charge node.