A memory circuit and a semiconductor device are provided. The memory circuit has a function of recovering data when power is suddenly shutdown. The memory device includes a bi-stable circuit capable of holding complementary data respectively at nodes N1 and N2; a first non-volatile memory circuit, connected to the node; and a second non-volatile memory circuit connected to the node. The first non-volatile memory circuit stores boot data, and the second non-volatile memory circuit inverts a logic level of the data held at the second node when the second non-volatile memory circuit stores data at the second node.