- 专利标题: Run-time memory device failure detection enhancement
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申请号: US16586861申请日: 2019-09-27
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公开(公告)号: US10984882B2公开(公告)日: 2021-04-20
- 发明人: Sanghoon Chu , Scott Jinn , Yuriy Pavlenko
- 申请人: Western Digital Technologies, Inc.
- 申请人地址: US CA San Jose
- 专利权人: Western Digital Technologies, Inc.
- 当前专利权人: Western Digital Technologies, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Morgan, Lewis & Bockius LLP
- 主分类号: G11C29/44
- IPC分类号: G11C29/44 ; G06F11/07 ; G06F11/14 ; G11C29/02 ; G11C29/38 ; G11C29/50 ; G06F11/30
摘要:
The subject technology provides implementations, which may be included as part of firmware of the flash memory device, that will not solely rely on a flash controller interpreted status but includes additional checks to the returned flash status byte. Each flash read, write, and erase command requires a status read command to determine the state of operation. Depending on the particular command issued, each bit of the returned status has a different meaning. The flash memory device firmware can check whether an illogical or inconsistent status is present. For example, if an overall pass/fail bit indicates a “pass” but a plane pass/fail bit indicates a “fail” then there could be an erroneous detection. Also, for every operation, the firmware can read status twice when the flash memory is ready. If the second status byte fails to match the first status byte then a die may be flagged as failing.
公开/授权文献
- US20200027520A1 Run-Time Memory Device Failure Detection Enhancement 公开/授权日:2020-01-23
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